Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong, Chang Xu, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

Original languageEnglish
Title of host publicationAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784990875374
DOIs
Publication statusPublished - Jul 2019
Event26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan
Duration: Jul 2 2019Jul 5 2019

Publication series

NameAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
CountryJapan
CityKyoto
Period7/2/197/5/19

All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

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