Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation

Xiangsheng Gong, Chang Xu, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High-carrier-mobility thin (≤ ∼50 nm) films on insulator are needed to realize high-performance fully-depleted transistors. To achieve this, an advanced solid-phase crystallization technique of Sn-doped Ge (GeSn) on insulator has been developed. By introduction of a-Si under-layers between GeSn/substrate interfaces, energy barrier for carriers at grain-boundaries in grown films is significantly decreased. As a result, thin (∼50 nm) poly-GeSn films with high carrier mobility of ∼300 cm2/Vs are obtained by using a-Si under-layers. This mobility is the highest among ever reported data for Ge and GeSn thin-films (≤50 nm) on insulator grown at low-temperatures (≤500°C).

Original languageEnglish
Title of host publicationAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials, Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9784990875374
DOIs
Publication statusPublished - Jul 2019
Event26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019 - Kyoto, Japan
Duration: Jul 2 2019Jul 5 2019

Publication series

NameAM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings

Conference

Conference26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019
CountryJapan
CityKyoto
Period7/2/197/5/19

Fingerprint

Carrier mobility
Crystallization
carrier mobility
solid phases
Modulation
insulators
crystallization
modulation
thin films
Energy barriers
Transistors
Grain boundaries
transistors
grain boundaries
Thin films
Substrates
Temperature
energy

All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Gong, X., Xu, C., & Sadoh, T. (2019). Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings [8830601] (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/AM-FPD.2019.8830601

Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. / Gong, Xiangsheng; Xu, Chang; Sadoh, Taizoh.

AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8830601 (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gong, X, Xu, C & Sadoh, T 2019, Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. in AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings., 8830601, AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings, Institute of Electrical and Electronics Engineers Inc., 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2019, Kyoto, Japan, 7/2/19. https://doi.org/10.23919/AM-FPD.2019.8830601
Gong X, Xu C, Sadoh T. Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. In AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8830601. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings). https://doi.org/10.23919/AM-FPD.2019.8830601
Gong, Xiangsheng ; Xu, Chang ; Sadoh, Taizoh. / Improved Carrier Mobility of Thin Ge Films on Insulator by Solid-Phase Crystallization Combined with Interface-Modulation. AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. (AM-FPD 2019 - 26th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, Proceedings).
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