TY - JOUR
T1 - Improved flux pinning for high-field applications in BaHfO3-Doped SmBa2Cu3 oy-coated conductors with high density of random pinning centers induced by BaHfO3 nanorods
AU - Miura, Shun
AU - Tsuchiya, Yuji
AU - Yoshida, Yutaka
AU - Ichino, Yusuke
AU - Awaji, Satoshi
AU - Ichinose, A.
AU - Matsumoto, Kaname
AU - Ibi, Akira
AU - Izumi, Teruo
AU - Iwakuma, Masataka
PY - 2018/6/1
Y1 - 2018/6/1
N2 -
The critical current performance of REBa
2
Cu
3
O
y
-coated conductors must be isotropically improved for use in high-field coil-based applications operated at low temperatures less than 50 K. The high and isotropic critical current densities (J
c
) with respect to the directions of the magnetic field under these operating conditions were achieved by a 3.8 vol.% BaHfO
3
(BHO)-doped SmBa
2
Cu
3
O
y
(SmBCO) film on a metallic substrate deposited with low-temperature growth (L-BHO film). In particular, the L-BHO film attained a high flux pinning force density over 1.5 TN/m
3
at a temperature of 4.2 K. From the anisotropic scaling approach based on the effective mass model, a high density of random pinning centers in the L-BHO film plays an important role in achieving the high J
c
performance at 4.2 K. In order to reveal the reason why the L-BHO film includes high density of random pinning centers, we compared the flux pinning properties and the dominant flux pinning centers between the L-BHO film and the other two samples: A 3.8 vol.% BHO-doped SmBCO film fabricated with relatively high-temperature growth, and a nondoped SmBCO film fabricated with low-temperature growth. From the comparison, it is revealed that the random pinning centers are induced by BHO nanorods.
AB -
The critical current performance of REBa
2
Cu
3
O
y
-coated conductors must be isotropically improved for use in high-field coil-based applications operated at low temperatures less than 50 K. The high and isotropic critical current densities (J
c
) with respect to the directions of the magnetic field under these operating conditions were achieved by a 3.8 vol.% BaHfO
3
(BHO)-doped SmBa
2
Cu
3
O
y
(SmBCO) film on a metallic substrate deposited with low-temperature growth (L-BHO film). In particular, the L-BHO film attained a high flux pinning force density over 1.5 TN/m
3
at a temperature of 4.2 K. From the anisotropic scaling approach based on the effective mass model, a high density of random pinning centers in the L-BHO film plays an important role in achieving the high J
c
performance at 4.2 K. In order to reveal the reason why the L-BHO film includes high density of random pinning centers, we compared the flux pinning properties and the dominant flux pinning centers between the L-BHO film and the other two samples: A 3.8 vol.% BHO-doped SmBCO film fabricated with relatively high-temperature growth, and a nondoped SmBCO film fabricated with low-temperature growth. From the comparison, it is revealed that the random pinning centers are induced by BHO nanorods.
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U2 - 10.1109/TASC.2018.2804667
DO - 10.1109/TASC.2018.2804667
M3 - Article
AN - SCOPUS:85041803177
VL - 28
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
SN - 1051-8223
IS - 4
M1 - 8000606
ER -