Improved gain 60GHz CMOS antenna with N-well grid

Adel Barakat; Ahmed Allam; Hala Elsadek; Adel B. Abdel-Rahman; Ramesh K. Pokharel; Takana Kaho

doi:10.1587/elex.13.20151115

Improved gain 60GHz CMOS antenna with N-well grid

Adel Barakat, Ahmed Allam, Hala Elsadek, Adel B. Abdel-Rahman, Ramesh K. Pokharel, Takana Kaho

Department of I&E Visionaries

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

This paper presents a novel technique to enhance Antenna-on- Chip gain by introducing a high resistivity layer below it. Instead of using the costly ion implantation method to increase resistivity, the N-well that is available in the standard CMOS process is used. A distributed grid structure of N-well on P-type substrate is designed such that the P and N semiconductors types are fully depleted forming a layer with high resistivity. By an electromagnetic simulation, the using depletion layers enhance the antenna gain and radiation efficiency without increasing the occupied area. The simulated and measured |S11| are in fair agreement. The measured gain is −1.5 dBi at 66 GHz.

Original language	English
Article number	20151115
Journal	IEICE Electronics Express
Volume	13
Issue number	5
DOIs	https://doi.org/10.1587/elex.13.20151115
Publication status	Published - Feb 19 2016

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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AU - Barakat, Adel

AU - Allam, Ahmed

AU - Elsadek, Hala

AU - Abdel-Rahman, Adel B.

AU - Pokharel, Ramesh K.

AU - Kaho, Takana

PY - 2016/2/19

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AB - This paper presents a novel technique to enhance Antenna-on- Chip gain by introducing a high resistivity layer below it. Instead of using the costly ion implantation method to increase resistivity, the N-well that is available in the standard CMOS process is used. A distributed grid structure of N-well on P-type substrate is designed such that the P and N semiconductors types are fully depleted forming a layer with high resistivity. By an electromagnetic simulation, the using depletion layers enhance the antenna gain and radiation efficiency without increasing the occupied area. The simulated and measured |S11| are in fair agreement. The measured gain is −1.5 dBi at 66 GHz.

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