Improved organic thin-film transistor characteristics using an elevated-electrode structure

Seung Kyum Kim, Chang Hoon Shim, Tomohiko Edura, Chihaya Adachi, Reiji Hattori

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1 Citation (Scopus)

Abstract

We propose a new structure for organic thin-film transistors, denoted as "elevated-electrode structure" in which the source and drain electrodes are formed on the elevated insulation layer. Indeed, the experimental data shows that this new structure has more than twice the drain current and mobility of a conventional bottom-structured TFT, this being found to be directly related to the height of the elevated electrode. Moreover, the reproducibility of this data confirms a greater stability than that of either top-contact or bottom-contact devices.

Original languageEnglish
Article number111601
JournalJapanese journal of applied physics
Volume53
Issue number11
DOIs
Publication statusPublished - Nov 1 2014

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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