Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

Masanori Ikishima, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	866-867
Number of pages	2
Journal	Extended abstracts of the ... Conference on Solid State Devices and Materials
Volume	2005
Publication status	Published - Sep 13 2005

Cite this

Research output: Contribution to journal › Article › peer-review

@article{e45a43cb825142528c85cf1c3f242cd9,

title = "Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI",

author = "Masanori Ikishima and Isao Tsunoda and Taizoh Sadoh and Toyotsugu Enokida and Masaharu Ninomiya and Masahiko Nakamae and Masanobu Miyao",

year = "2005",

month = sep,

day = "13",

language = "English",

volume = "2005",

pages = "866--867",

journal = "Extended abstracts of the ... Conference on Solid State Devices and Materials",

}

TY - JOUR

T1 - Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI

AU - Ikishima, Masanori

AU - Tsunoda, Isao

AU - Sadoh, Taizoh

AU - Enokida, Toyotsugu

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Miyao, Masanobu

PY - 2005/9/13

Y1 - 2005/9/13

UR - https://ci.nii.ac.jp/naid/10022543476

M3 - Article

VL - 2005

SP - 866

EP - 867

JO - Extended abstracts of the ... Conference on Solid State Devices and Materials

JF - Extended abstracts of the ... Conference on Solid State Devices and Materials

ER -