Original language | English |
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Pages (from-to) | 866-867 |
Number of pages | 2 |
Journal | Extended abstracts of the ... Conference on Solid State Devices and Materials |
Volume | 2005 |
Publication status | Published - Sep 13 2005 |
Improved oxidation-induced Ge condensation technique by using H^+ irradiation and post-annealing for highly stress-relaxed ultrathin SGOI
Masanori Ikishima, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao
Research output: Contribution to journal › Article › peer-review