Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials)

Masanori Tanaka; Isao Tsunoda; Taizoh Sadoh; Toyotsugu Enokida; Masaharu Ninomiya; Masahiko Nakamae; Masanobu Miyao

Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials)

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	3147-3149
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	45
Issue number	4
Publication status	Published - Apr 2006

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Tanaka, M., Tsunoda, I., Sadoh, T., Enokida, T., Ninomiya, M., Nakamae, M., & Miyao, M. (2006). Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials). Japanese Journal of Applied Physics, Part 2: Letters, 45(4), 3147-3149. http://id.ndl.go.jp/bib/7894841

Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials). / Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh et al.
In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 4, 04.2006, p. 3147-3149.

Research output: Contribution to journal › Article › peer-review

Tanaka, M, Tsunoda, I, Sadoh, T, Enokida, T, Ninomiya, M, Nakamae, M & Miyao, M 2006, 'Improved Oxidation-Induced Ge Condensation Technique Using H〔+〕 Implantation and Post Annealing for Highly Stress-Relaxed Ultrathin SiGe on Insulator (Special Issue: Solid State Devices & Materials)', Japanese Journal of Applied Physics, Part 2: Letters, vol. 45, no. 4, pp. 3147-3149. <http://id.ndl.go.jp/bib/7894841>

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AU - Miyao, Masanobu

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