Improved oxidation-induced Ge condensation technique using H+ implantation and post annealing for highly stress-relaxed ultrathin SiGe on insulator

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)

Abstract

The oxidation-induced Ge condensation of SiGe/Si-on-insulator structures was investigated. The relaxation rate of SiGe on insulator (SGOI) abruptly decreased with SiGe thickness below 50nm. To enhance the relaxation rate in ultra thin SGOI, a new technique combined with intermediate-dose H+ implantation (5 × 1015 cm-2) and post annealing (1200°C) was developed. It was demonstrated that highly relaxed (70%) ultra thin SGOI with a low defect density (<106 cm-2) is realized by this technique.

Original languageEnglish
Pages (from-to)3147-3149
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - Apr 25 2006

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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