Improved oxidation-induced Ge condensation technique using H+ implantation and post annealing for highly stress-relaxed ultrathin SiGe on insulator

Masanori Tanaka, Isao Tsunoda, Taizoh Sadoh, Toyotsugu Enokida, Masaharu Ninomiya, Masahiko Nakamae, Masanobu Miyao

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The oxidation-induced Ge condensation of SiGe/Si-on-insulator structures was investigated. The relaxation rate of SiGe on insulator (SGOI) abruptly decreased with SiGe thickness below 50nm. To enhance the relaxation rate in ultra thin SGOI, a new technique combined with intermediate-dose H+ implantation (5 × 1015 cm-2) and post annealing (1200°C) was developed. It was demonstrated that highly relaxed (70%) ultra thin SGOI with a low defect density (<106 cm-2) is realized by this technique.

Original languageEnglish
Pages (from-to)3147-3149
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number4 B
DOIs
Publication statusPublished - Apr 25 2006

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Defect density
Ion implantation
Condensation
implantation
condensation
insulators
Annealing
Oxidation
oxidation
annealing
dosage
defects

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Improved oxidation-induced Ge condensation technique using H+ implantation and post annealing for highly stress-relaxed ultrathin SiGe on insulator. / Tanaka, Masanori; Tsunoda, Isao; Sadoh, Taizoh; Enokida, Toyotsugu; Ninomiya, Masaharu; Nakamae, Masahiko; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 4 B, 25.04.2006, p. 3147-3149.

Research output: Contribution to journalArticle

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AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

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