The oxidation-induced Ge condensation of SiGe/Si-on-insulator structures was investigated. The relaxation rate of SiGe on insulator (SGOI) abruptly decreased with SiGe thickness below 50nm. To enhance the relaxation rate in ultra thin SGOI, a new technique combined with intermediate-dose H+ implantation (5 × 1015 cm-2) and post annealing (1200°C) was developed. It was demonstrated that highly relaxed (70%) ultra thin SGOI with a low defect density (<106 cm-2) is realized by this technique.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||4 B|
|Publication status||Published - Apr 25 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)