Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

H. Yamaguchi; K. Kato; Y. Nakai; K. Onomitsu; S. Warisawa; S. Ishihara

doi:10.1063/1.2952957

Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

H. Yamaguchi, K. Kato, Y. Nakai, K. Onomitsu, S. Warisawa, S. Ishihara

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In_0.1 Ga_0.9 As In0.1 Al_0.9 As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/ nanoelectromechanical devices.

Original language	English
Article number	251913
Journal	Applied Physics Letters
Volume	92
Issue number	25
DOIs	https://doi.org/10.1063/1.2952957
Publication status	Published - 2008
Externally published	Yes

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2952957

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title = "Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain",

abstract = "Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In0.1 Ga0.9 As In0.1 Al0.9 As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/ nanoelectromechanical devices.",

author = "H. Yamaguchi and K. Kato and Y. Nakai and K. Onomitsu and S. Warisawa and S. Ishihara",

note = "Funding Information: We thank I. Mahboob and H. Okamoto for valuable discussions and suggestions. This work was partly supported by JSPS KAKENHI (16206003, 20246064, and 19206016). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.",

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doi = "10.1063/1.2952957",

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T1 - Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

AU - Yamaguchi, H.

AU - Kato, K.

AU - Nakai, Y.

AU - Onomitsu, K.

AU - Warisawa, S.

AU - Ishihara, S.

N1 - Funding Information: We thank I. Mahboob and H. Okamoto for valuable discussions and suggestions. This work was partly supported by JSPS KAKENHI (16206003, 20246064, and 19206016). Copyright: Copyright 2008 Elsevier B.V., All rights reserved.

PY - 2008

Y1 - 2008

N2 - Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In0.1 Ga0.9 As In0.1 Al0.9 As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/ nanoelectromechanical devices.

AB - Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In0.1 Ga0.9 As In0.1 Al0.9 As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/ nanoelectromechanical devices.

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Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

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