Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalArticle

Abstract

An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.

Original languageEnglish
Article number038002
JournalJapanese Journal of Applied Physics
Volume56
Issue number3
DOIs
Publication statusPublished - Mar 2017

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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