Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

Yuya Inatomi, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalArticle

Abstract

An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.

Original languageEnglish
Article number038002
JournalJapanese Journal of Applied Physics
Volume56
Issue number3
DOIs
Publication statusPublished - Mar 1 2017

Fingerprint

Semiconductor growth
Vapor phase epitaxy
vapor phase epitaxy
Thermodynamics
thermodynamics
Gases
gases
Metallorganic vapor phase epitaxy
mass balance
Nitrides
Partial pressure
nitrides
partial pressure
Molecules
molecules

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy. / Inatomi, Yuya; Kangawa, Yoshihiro; Kakimoto, Koichi; Koukitu, Akinori.

In: Japanese Journal of Applied Physics, Vol. 56, No. 3, 038002, 01.03.2017.

Research output: Contribution to journalArticle

@article{12a9040961174ba2961f1882f7d7f666,
title = "Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy",
abstract = "An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.",
author = "Yuya Inatomi and Yoshihiro Kangawa and Koichi Kakimoto and Akinori Koukitu",
year = "2017",
month = "3",
day = "1",
doi = "10.7567/JJAP.56.038002",
language = "English",
volume = "56",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "3",

}

TY - JOUR

T1 - Improved thermodynamic analysis of gas reactions for compound semiconductor growth by vapor-phase epitaxy

AU - Inatomi, Yuya

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Koukitu, Akinori

PY - 2017/3/1

Y1 - 2017/3/1

N2 - An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.

AB - An improved thermodynamic analysis method for vapor-phase epitaxy is proposed. In the conventional method, the mass-balance constraint equations are expressed in terms of variations in partial pressure. Although the conventional method is appropriate for gas-solid reactions occurring near the growth surface, it is not suitable for gas reactions that involve changes in the number of gas molecules. We reconsider the constraint equations in order to predict the effect of gas reactions on semiconductor growth processes. To demonstrate the feasibility of the improved method, the growth process of group-III nitrides by metalorganic vapor-phase epitaxy has been investigated.

UR - http://www.scopus.com/inward/record.url?scp=85014420395&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85014420395&partnerID=8YFLogxK

U2 - 10.7567/JJAP.56.038002

DO - 10.7567/JJAP.56.038002

M3 - Article

VL - 56

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 3

M1 - 038002

ER -