Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Wataru Saito; Shin Ichi Nishizawa

doi:10.1109/LED.2020.3034898

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Wataru Saito, Shin Ichi Nishizawa

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.

Original language	English
Article number	9245572
Pages (from-to)	1814-1816
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	41
Issue number	12
DOIs	https://doi.org/10.1109/LED.2020.3034898
Publication status	Published - Dec 2020

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/LED.2020.3034898

Cite this

@article{884fcd7148c14f339cb7561339f3543c,

title = "Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor",

abstract = "A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.",

author = "Wataru Saito and Nishizawa, {Shin Ichi}",

year = "2020",

month = dec,

doi = "10.1109/LED.2020.3034898",

language = "English",

volume = "41",

pages = "1814--1816",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

AU - Saito, Wataru

AU - Nishizawa, Shin Ichi

PY - 2020/12

Y1 - 2020/12

N2 - A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.

AB - A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.

UR - http://www.scopus.com/inward/record.url?scp=85097336417&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85097336417&partnerID=8YFLogxK

U2 - 10.1109/LED.2020.3034898

DO - 10.1109/LED.2020.3034898

M3 - Article

AN - SCOPUS:85097336417

SN - 0741-3106

VL - 41

SP - 1814

EP - 1816

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 12

M1 - 9245572

ER -

Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this