Improvement Design for Turn-On Switching Characteristics in Surface Buffer Insulated Gate Bipolar Transistor

Research output: Contribution to journalArticlepeer-review

Abstract

A design direction in surface buffer insulated gate bipolar transistor (SB-IGBT) is shown for improvement of turn-on switching characteristics, such as switching controllability, current surge and turn-on loss. At turn-on switching, hole current around the gate degrades the switching controllability and induces EMI noise due to negative gate capacitance. However, SB-IGBT can be designed to suppress the negative gate capacitance by enhancement of hole evacuation through pMOS channel. Although turn-on loss can be decreased by small gate-collector capacitance C {gc} , the influence of negative gate capacitance is remarkable. Therefore, TCAD simulation results show that high hole evacuation through pMOS channel and optimum C {gc} design are effective to improve turn-on switching characteristics.

Original languageEnglish
Article number9245572
Pages (from-to)1814-1816
Number of pages3
JournalIEEE Electron Device Letters
Volume41
Issue number12
DOIs
Publication statusPublished - Dec 2020

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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