Improvement of buried oxide integrity in ITOX SIMOX wafers

M. Ando, Y. Miyamura, J. Jablonski, M. Saito, S. Kitagawa, T. Katayama

Research output: Contribution to conferencePaperpeer-review

1 Citation (Scopus)

Abstract

The results of electrical evaluation of the buried oxide (BOX) layers synthesized with doses from 2.7 to 3.5 1017 cm-2 at 180 keV into Si wafers are presented. Due to the applied internal thermal oxidation (ITOX), the density of Si pipes remains smaller than 1.0 cm-2 for doses ranged from 2.9 to 3.5×1017 cm-2. The obtained results confirm that ITOX treatment can shift the lower limit of the optimal dose range due to the Si pipe annihilation. Moreover, the integrity of the buried oxide layers in low-dose SIMOX wafers can be significantly improved by reducing the implantation dose with simultaneous optimization of the ITOX treatment that allows the dose reduction.

Original languageEnglish
Pages12-13
Number of pages2
Publication statusPublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA
Duration: Oct 6 1997Oct 9 1997

Conference

ConferenceProceedings of the 1997 IEEE International SOI Conference
CityFish Camp, CA, USA
Period10/6/9710/9/97

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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