Improvement of buried oxide integrity in ITOX SIMOX wafers

M. Ando; Y. Miyamura; J. Jablonski; M. Saito; S. Kitagawa; T. Katayama

Improvement of buried oxide integrity in ITOX SIMOX wafers

M. Ando, Y. Miyamura, J. Jablonski, M. Saito, S. Kitagawa, T. Katayama

Research output: Contribution to conference › Paper › peer-review

Abstract

The results of electrical evaluation of the buried oxide (BOX) layers synthesized with doses from 2.7 to 3.5 10¹⁷ cm^-2 at 180 keV into Si wafers are presented. Due to the applied internal thermal oxidation (ITOX), the density of Si pipes remains smaller than 1.0 cm^-2 for doses ranged from 2.9 to 3.5×10¹⁷ cm^-2. The obtained results confirm that ITOX treatment can shift the lower limit of the optimal dose range due to the Si pipe annihilation. Moreover, the integrity of the buried oxide layers in low-dose SIMOX wafers can be significantly improved by reducing the implantation dose with simultaneous optimization of the ITOX treatment that allows the dose reduction.

Original language	English
Pages	12-13
Number of pages	2
Publication status	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE International SOI Conference - Fish Camp, CA, USA Duration: Oct 6 1997 → Oct 9 1997

Conference

Conference	Proceedings of the 1997 IEEE International SOI Conference
City	Fish Camp, CA, USA
Period	10/6/97 → 10/9/97

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

@conference{10276946251040f6b482a86f11279211,

title = "Improvement of buried oxide integrity in ITOX SIMOX wafers",

abstract = "The results of electrical evaluation of the buried oxide (BOX) layers synthesized with doses from 2.7 to 3.5 1017 cm-2 at 180 keV into Si wafers are presented. Due to the applied internal thermal oxidation (ITOX), the density of Si pipes remains smaller than 1.0 cm-2 for doses ranged from 2.9 to 3.5×1017 cm-2. The obtained results confirm that ITOX treatment can shift the lower limit of the optimal dose range due to the Si pipe annihilation. Moreover, the integrity of the buried oxide layers in low-dose SIMOX wafers can be significantly improved by reducing the implantation dose with simultaneous optimization of the ITOX treatment that allows the dose reduction.",

author = "M. Ando and Y. Miyamura and J. Jablonski and M. Saito and S. Kitagawa and T. Katayama",

year = "1997",

language = "English",

pages = "12--13",

note = "Proceedings of the 1997 IEEE International SOI Conference ; Conference date: 06-10-1997 Through 09-10-1997",

}

TY - CONF

T1 - Improvement of buried oxide integrity in ITOX SIMOX wafers

AU - Ando, M.

AU - Miyamura, Y.

AU - Jablonski, J.

AU - Saito, M.

AU - Kitagawa, S.

AU - Katayama, T.

PY - 1997

Y1 - 1997

N2 - The results of electrical evaluation of the buried oxide (BOX) layers synthesized with doses from 2.7 to 3.5 1017 cm-2 at 180 keV into Si wafers are presented. Due to the applied internal thermal oxidation (ITOX), the density of Si pipes remains smaller than 1.0 cm-2 for doses ranged from 2.9 to 3.5×1017 cm-2. The obtained results confirm that ITOX treatment can shift the lower limit of the optimal dose range due to the Si pipe annihilation. Moreover, the integrity of the buried oxide layers in low-dose SIMOX wafers can be significantly improved by reducing the implantation dose with simultaneous optimization of the ITOX treatment that allows the dose reduction.

AB - The results of electrical evaluation of the buried oxide (BOX) layers synthesized with doses from 2.7 to 3.5 1017 cm-2 at 180 keV into Si wafers are presented. Due to the applied internal thermal oxidation (ITOX), the density of Si pipes remains smaller than 1.0 cm-2 for doses ranged from 2.9 to 3.5×1017 cm-2. The obtained results confirm that ITOX treatment can shift the lower limit of the optimal dose range due to the Si pipe annihilation. Moreover, the integrity of the buried oxide layers in low-dose SIMOX wafers can be significantly improved by reducing the implantation dose with simultaneous optimization of the ITOX treatment that allows the dose reduction.

UR - http://www.scopus.com/inward/record.url?scp=0031362870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031362870&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031362870

SP - 12

EP - 13

T2 - Proceedings of the 1997 IEEE International SOI Conference

Y2 - 6 October 1997 through 9 October 1997

ER -

Improvement of buried oxide integrity in ITOX SIMOX wafers

Abstract

Conference

All Science Journal Classification (ASJC) codes

Other files and links

Fingerprint

Cite this