Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

Shinya Kato, Yasuyoshi Kurokawa, Shinsuke Miyajima, Yuya Watanabe, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to journalLetter

18 Citations (Scopus)

Abstract

To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalNanoscale Research Letters
Volume8
Issue number1
DOIs
Publication statusPublished - Nov 14 2013
Externally publishedYes

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Atomic layer deposition
Silicon
atomic layer epitaxy
diffusion length
Nanowires
nanowires
silicon
Passivation
passivity
minority carriers
Solar cells
solar cells
Annealing
annealing
Carrier lifetime
Aluminum Oxide
carrier lifetime
high aspect ratio
simulators
Oxide films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition. / Kato, Shinya; Kurokawa, Yasuyoshi; Miyajima, Shinsuke; Watanabe, Yuya; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

In: Nanoscale Research Letters, Vol. 8, No. 1, 14.11.2013, p. 1-8.

Research output: Contribution to journalLetter

Kato, Shinya ; Kurokawa, Yasuyoshi ; Miyajima, Shinsuke ; Watanabe, Yuya ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition. In: Nanoscale Research Letters. 2013 ; Vol. 8, No. 1. pp. 1-8.
@article{7ce27724879747a8b1019e65f435b353,
title = "Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition",
abstract = "To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.",
author = "Shinya Kato and Yasuyoshi Kurokawa and Shinsuke Miyajima and Yuya Watanabe and Akira Yamada and Yoshimi Ohta and Yusuke Niwa and masaki Hirota",
year = "2013",
month = "11",
day = "14",
doi = "10.1186/1556-276X-8-361",
language = "English",
volume = "8",
pages = "1--8",
journal = "Nanoscale Research Letters",
issn = "1931-7573",
publisher = "Springer New York",
number = "1",

}

TY - JOUR

T1 - Improvement of carrier diffusion length in silicon nanowire arrays using atomic layer deposition

AU - Kato, Shinya

AU - Kurokawa, Yasuyoshi

AU - Miyajima, Shinsuke

AU - Watanabe, Yuya

AU - Yamada, Akira

AU - Ohta, Yoshimi

AU - Niwa, Yusuke

AU - Hirota, masaki

PY - 2013/11/14

Y1 - 2013/11/14

N2 - To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

AB - To achieve a high-efficiency silicon nanowire (SiNW) solar cell, surface passivation technique is very important because a SiNW array has a large surface area. We successfully prepared by atomic layer deposition (ALD) highquality aluminum oxide (Al2O3) film for passivation on the whole surface of the SiNW arrays. The minority carrier lifetime of the Al2O3-depositedSiNW arrays with bulk silicon substrate was improved to 27 μs at the optimum annealing condition. To remove the effect of bulk silicon, the effective diffusion length of minority carriers in the SiNW array was estimated by simple equations and a device simulator. As a result, it was revealed that the effective diffusion length in the SiNW arrays increased from 3.25 to 13.5 μm by depositing Al2O3 and post-annealing at 400°C. This improvement of the diffusion length is very important for application to solar cells, and Al2O3 deposited by ALD is a promising passivation material for a structure with high aspect ratio such as SiNW arrays.

UR - http://www.scopus.com/inward/record.url?scp=84887280190&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887280190&partnerID=8YFLogxK

U2 - 10.1186/1556-276X-8-361

DO - 10.1186/1556-276X-8-361

M3 - Letter

VL - 8

SP - 1

EP - 8

JO - Nanoscale Research Letters

JF - Nanoscale Research Letters

SN - 1931-7573

IS - 1

ER -