Improvement of conductivity by incorporation of boron atoms in hydrogenated amorphous carbon films fabricated by plasma CVD methods and its electrochemical properties

Hiroshi Naragino, Kohsuke Yoshinaga, Seiji Tatsuta, Kensuke Honda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Boron-doped hydrogenated amorphous carbon thin films were synthesized with plasma-enhanced CVD method. Electrochemical properties of B-doped DLC surface that can be useful in the application as an electrochemical sensor were investigated. B-doped DLC films deposited in this study possessed a B/C ratio of 0.013 and contained sp3-bonded carbons with atomic ratio of 22/78 (sp3/sp2). The electrical resistivity was 0.9147 Ω cm. B-doped DLC thin films exhibited a wide working potential range over 3 V, low double-layer capacitance, high resistance to electrochemically induced corrosion in strong acid media, and reversible electron transfer kinetics for inorganic redox analytes (Fe(CN)63-/4- and Ru(NH 3)62+/3+, which were on the same level as those of BDD. The redox reaction of Ce3+/4+ with standard potential higher than H2O/O2 was observed due to the wider potential window.

Original languageEnglish
Title of host publicationSensors, Actuators, and Microsystems (General) - 220th ECS Meeting
Pages59-68
Number of pages10
Edition20
DOIs
Publication statusPublished - 2012
Externally publishedYes
EventSensors, Actuators, and Microsystems General Session - 220th ECS Meeting - Boston, MA, United States
Duration: Oct 9 2011Oct 14 2011

Publication series

NameECS Transactions
Number20
Volume41
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Conference

ConferenceSensors, Actuators, and Microsystems General Session - 220th ECS Meeting
CountryUnited States
CityBoston, MA
Period10/9/1110/14/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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