IMPROVEMENT OF CRYSTALLINE QUALITY IN THE Si/CaF//2/Si STRUCTURE BY ION IMPLANTATION AND SOLID PHASE RECRYSTALLIZATION.

T. Asano, K. Orihara, H. Ishiwara, S. Furukawa

Research output: Contribution to conferencePaper

Abstract

Crystalline Si films formed on composite insulator/Si structures are of great interest in fabrication of three dimensional integrated circuits. In this work, solid phase recrystallization of ion implanted amorphous Si is introduced to the Si/CaF//2/Si structure in order to improve the crystalline quality of the top Si film. It is shown that crystalline quality improvement can be realized in the Si films formed on Si(100) substrates, but not in the Si films formed on Si(111) substrates.

Original languageEnglish
Pages423-424
Number of pages2
Publication statusPublished - Dec 1 1982

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

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