Crystalline Si films formed on composite insulator/Si structures are of great interest in fabrication of three dimensional integrated circuits. In this work, solid phase recrystallization of ion implanted amorphous Si is introduced to the Si/CaF//2/Si structure in order to improve the crystalline quality of the top Si film. It is shown that crystalline quality improvement can be realized in the Si films formed on Si(100) substrates, but not in the Si films formed on Si(111) substrates.
|Number of pages||2|
|Publication status||Published - Dec 1 1982|
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