TY - JOUR
T1 - Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization
AU - Asano, Tanemasa
AU - Ishiwara, Hiroshi
AU - Orihara, Kouzo
AU - Furukawa, Seijiro
PY - 1983/2
Y1 - 1983/2
N2 - Crystalline quality of Si films grown on CaF2/Si heteroepitaxial structures has been improved by solid phase recrystallization of ion implanted amorphous layers. Both the Si/CaF2/Si(100) and Si/CaF2/Si(111) structures were bombarded with P+ions to amorphize the surface region of the top Si films, and subsequently annealed at temperatures of 550–750°C. It has been found from ion channeling measurements that the crystalline quality of the Si films on CaF2/Si(100) structures is significantly improved after recrystallization at 750°C, but the quality of the Si films on CaF2/Si(111) structures is not improved by this method.
AB - Crystalline quality of Si films grown on CaF2/Si heteroepitaxial structures has been improved by solid phase recrystallization of ion implanted amorphous layers. Both the Si/CaF2/Si(100) and Si/CaF2/Si(111) structures were bombarded with P+ions to amorphize the surface region of the top Si films, and subsequently annealed at temperatures of 550–750°C. It has been found from ion channeling measurements that the crystalline quality of the Si films on CaF2/Si(100) structures is significantly improved after recrystallization at 750°C, but the quality of the Si films on CaF2/Si(111) structures is not improved by this method.
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U2 - 10.1143/JJAP.22.L118
DO - 10.1143/JJAP.22.L118
M3 - Article
AN - SCOPUS:18544404519
SN - 0021-4922
VL - 22
SP - L118-L120
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2
ER -