Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization

Tanemasa Asano, Hiroshi Ishiwara, Kouzo Orihara, Seijiro Furukawa

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Abstract

Crystalline quality of Si films grown on CaF2/Si heteroepitaxial structures has been improved by solid phase recrystallization of ion implanted amorphous layers. Both the Si/CaF2/Si(100) and Si/CaF2/Si(111) structures were bombarded with P+ions to amorphize the surface region of the top Si films, and subsequently annealed at temperatures of 550–750°C. It has been found from ion channeling measurements that the crystalline quality of the Si films on CaF2/Si(100) structures is significantly improved after recrystallization at 750°C, but the quality of the Si films on CaF2/Si(111) structures is not improved by this method.

Original languageEnglish
Pages (from-to)L118-L120
JournalJapanese Journal of Applied Physics
Volume22
Issue number2
DOIs
Publication statusPublished - Feb 1983

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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