Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization

Tanemasa Asano, Hiroshi Ishiwara, Kouzo Orihara, Seijiro Furukawa

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Crystalline quality of Si films grown on CaF2/Si heteroepitaxial structures has been improved by solid phase recrystallization of ion implanted amorphous layers. Both the Si/CaF2/Si(100) and Si/CaF2/Si(111) structures were bombarded with P+ions to amorphize the surface region of the top Si films, and subsequently annealed at temperatures of 550–750°C. It has been found from ion channeling measurements that the crystalline quality of the Si films on CaF2/Si(100) structures is significantly improved after recrystallization at 750°C, but the quality of the Si films on CaF2/Si(111) structures is not improved by this method.

Original languageEnglish
Pages (from-to)L118-L120
JournalJapanese Journal of Applied Physics
Volume22
Issue number2
DOIs
Publication statusPublished - Jan 1 1983
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
solid phases
Crystallization
Crystalline materials
Ions
ions
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization. / Asano, Tanemasa; Ishiwara, Hiroshi; Orihara, Kouzo; Furukawa, Seijiro.

In: Japanese Journal of Applied Physics, Vol. 22, No. 2, 01.01.1983, p. L118-L120.

Research output: Contribution to journalArticle

Asano, Tanemasa ; Ishiwara, Hiroshi ; Orihara, Kouzo ; Furukawa, Seijiro. / Improvement of crystalline quality of Si films on CaF2/Si structures by ion implantation and solid phase recrystallization. In: Japanese Journal of Applied Physics. 1983 ; Vol. 22, No. 2. pp. L118-L120.
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