Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing

Daisuke Nakamura; Norihiro Tetsuyama; Tetsuya Shimogaki; Mitsuhiro Higashihata; Tatsuo Okada

doi:10.2961/jlmn.2014.03.0005

Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing

Daisuke Nakamura, Norihiro Tetsuyama, Tetsuya Shimogaki, Mitsuhiro Higashihata, Tatsuo Okada

Applied Energy Engineering

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.

Original language	English
Pages (from-to)	209-212
Number of pages	4
Journal	Journal of Laser Micro Nanoengineering
Volume	9
Issue number	3
DOIs	https://doi.org/10.2961/jlmn.2014.03.0005
Publication status	Published - 2014

All Science Journal Classification (ASJC) codes

Instrumentation
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

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title = "Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing",

abstract = "We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.",

author = "Daisuke Nakamura and Norihiro Tetsuyama and Tetsuya Shimogaki and Mitsuhiro Higashihata and Tatsuo Okada",

year = "2014",

doi = "10.2961/jlmn.2014.03.0005",

language = "English",

volume = "9",

pages = "209--212",

journal = "Journal of Laser Micro Nanoengineering",

issn = "1880-0688",

publisher = "Japan Laser Processing",

number = "3",

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T1 - Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing

AU - Nakamura, Daisuke

AU - Tetsuyama, Norihiro

AU - Shimogaki, Tetsuya

AU - Higashihata, Mitsuhiro

AU - Okada, Tatsuo

PY - 2014

Y1 - 2014

N2 - We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.

AB - We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.

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JO - Journal of Laser Micro Nanoengineering

JF - Journal of Laser Micro Nanoengineering

SN - 1880-0688

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