Improvement of junction properties of ZnO nanorod/GaN heterojunction using selective laser processing

Daisuke Nakamura, Norihiro Tetsuyama, Tetsuya Shimogaki, Mitsuhiro Higashihata, Tatsuo Okada

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1 Citation (Scopus)


We fabricated the ZnO nanorod/GaN heterojunction light emitting diode by directly-growth of the ZnO nanorods on the GaN film using the nanoparticle-assisted pulsed laser deposition. Subsequently, selective laser irradiation to the p-n junction was applied to improve the junction properties. The UV emission was strongly enhanced by the laser irradiation. The peak wavelength of the UV emission is 377 nm, which is attributed to the near-band-emission of ZnO. In addition, the forward current was increased in the I-V characteristics by a factor of 6 at a bias voltage of 30 V.

Original languageEnglish
Pages (from-to)209-212
Number of pages4
JournalJournal of Laser Micro Nanoengineering
Issue number3
Publication statusPublished - Jan 1 2014


All Science Journal Classification (ASJC) codes

  • Instrumentation
  • Industrial and Manufacturing Engineering
  • Electrical and Electronic Engineering

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