Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)2357-2360
Number of pages4
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number4
Publication statusPublished - Apr 30 2005

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