Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh; Ryo Matsuura; Masaharu Ninomiya; Masahiko Nakamae; Toyotsugu Enokida; Hiroyasu Hagino; Masanobu Miyao

doi:10.1143/JJAP.44.2357

Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

Taizoh Sadoh, Ryo Matsuura, Masaharu Ninomiya, Masahiko Nakamae, Toyotsugu Enokida, Hiroyasu Hagino, Masanobu Miyao

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Abstract

The effects of the H+ implantation (8.1 keV and 0–5×1016 cm−2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si1−xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm−2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1−xGex layers on SiO2. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.

Original language	English
Pages (from-to)	2357-2360
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 2: Letters
Volume	44
Issue number	4
DOIs	https://doi.org/10.1143/JJAP.44.2357
Publication status	Published - 2005

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https://doi.org/10.1143/JJAP.44.2357

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@article{06810f6676d74910beae0294f7d06ff5,

title = "Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator",

abstract = "The effects of the H+ implantation (8.1 keV and 0–5×1016 cm−2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si1−xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm−2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1−xGex layers on SiO2. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.",

author = "Taizoh Sadoh and Ryo Matsuura and Masaharu Ninomiya and Masahiko Nakamae and Toyotsugu Enokida and Hiroyasu Hagino and Masanobu Miyao",

year = "2005",

doi = "10.1143/JJAP.44.2357",

language = "English",

volume = "44",

pages = "2357--2360",

journal = "Japanese Journal of Applied Physics, Part 2: Letters",

issn = "0021-4922",

publisher = "IOP Publishing Ltd.",

number = "4",

}

TY - JOUR

T1 - Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

AU - Sadoh, Taizoh

AU - Matsuura, Ryo

AU - Ninomiya, Masaharu

AU - Nakamae, Masahiko

AU - Enokida, Toyotsugu

AU - Hagino, Hiroyasu

AU - Miyao, Masanobu

PY - 2005

Y1 - 2005

N2 - The effects of the H+ implantation (8.1 keV and 0–5×1016 cm−2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si1−xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm−2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1−xGex layers on SiO2. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.

AB - The effects of the H+ implantation (8.1 keV and 0–5×1016 cm−2) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si1−xGex buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>1015 cm−2) H+ implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si1−xGex layers on SiO2. This newly developed combination method of H+ implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.

U2 - 10.1143/JJAP.44.2357

DO - 10.1143/JJAP.44.2357

M3 - Article

SN - 0021-4922

VL - 44

SP - 2357

EP - 2360

JO - Japanese Journal of Applied Physics, Part 2: Letters

JF - Japanese Journal of Applied Physics, Part 2: Letters

IS - 4

ER -

Improvement of Oxidation-Induced Ge Condensation Method by H+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SiGe-on-Insulator

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