The effects of the H<SUP>+</SUP> implantation (8.1 keV and 0–5×10<SUP>16</SUP> cm<SUP>−2</SUP>) and two-step annealing (1st: 500°C for 30 min, 2nd: 850°C for 60 min) on the stress relaxation of c-Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> buffer layers on insulator (SGOI) formed by the oxidation-induced Ge condensation process have been investigated. The stress relaxation of SGOI during oxidation (1100°C) was significantly improved by high-dose (>10<SUP>15</SUP> cm<SUP>−2</SUP>) H<SUP>+</SUP> implantation. However, the oxidation was also enhanced by the implantation. The enhanced oxidation was completely suppressed by the two-step annealing before oxidation. The enhanced stress relaxation was attributed to the enhanced gliding of the c-Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> layers on SiO<SUB>2</SUB>. This newly developed combination method of H<SUP>+</SUP> implantation, the two-step annealing, and the oxidation-induced Ge condensation will be a powerful tool in the fabrication of highly relaxed SGOI for growth of strained Si layers.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2005|