Original language | English |
---|---|
Pages (from-to) | 780-781 |
Number of pages | 2 |
Journal | Extended abstracts of the ... Conference on Solid State Devices and Materials |
Volume | 2004 |
Publication status | Published - Sep 15 2004 |
Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI
Taizoh Sadoh, Ryo Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao
Research output: Contribution to journal › Article › peer-review