Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Taizoh Sadoh, Ryo Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

Research output: Contribution to journalArticle

Original languageEnglish
Pages (from-to)780-781
Number of pages2
JournalExtended abstracts of the ... Conference on Solid State Devices and Materials
Volume2004
Publication statusPublished - Sep 15 2004

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