Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

Taizoh Sadoh, Ryo Matsuura, M. Ninomiya, M. Nakamae, T. Enokida, H. Hagino, M. Miyao

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	780-781
Number of pages	2
Journal	Extended abstracts of the ... Conference on Solid State Devices and Materials
Volume	2004
Publication status	Published - Sep 15 2004

Cite this

@article{978fd3813a3d4a7880e0f3a80c927ea4,

title = "Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI",

author = "Taizoh Sadoh and Ryo Matsuura and M. Ninomiya and M. Nakamae and T. Enokida and H. Hagino and M. Miyao",

year = "2004",

month = sep,

day = "15",

language = "English",

volume = "2004",

pages = "780--781",

journal = "Extended abstracts of the ... Conference on Solid State Devices and Materials",

}

TY - JOUR

T1 - Improvement of Oxidation-Induced Ge Condensation Method by H^+ Implantation and Two-Step Annealing for Highly Stress-Relaxed SGOI

AU - Sadoh, Taizoh

AU - Matsuura, Ryo

AU - Ninomiya, M.

AU - Nakamae, M.

AU - Enokida, T.

AU - Hagino, H.

AU - Miyao, M.

PY - 2004/9/15

Y1 - 2004/9/15

UR - https://ci.nii.ac.jp/naid/10022540118

M3 - Article

VL - 2004

SP - 780

EP - 781

JO - Extended abstracts of the ... Conference on Solid State Devices and Materials

JF - Extended abstracts of the ... Conference on Solid State Devices and Materials

ER -