Improvement of Si adhesion and reduction of electron recombination for Si quantum dot-sensitized solar cells

Hyunwoong Seo, Yuting Wang, Muneharu Sato, Giichiro Uchida, Kunihiro Kamataki, Naho Itagaki, Kazunori Koga, Masaharu Shiratani

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Quantum dots (QDs) based on multiple exciton generation have attracted much attention. They are capable of generating multiple electrons by single-photon absorption. Si is one of the good QD sources and its nontoxicity and abundance are advantageous for photovoltaics. In this work, Si QDs were fabricated by multihollow discharge plasma chemical vapor deposition, and they were applied to Si QD-sensitized solar cells. Their initial performance was poor because of the weak adhesion of Si and charge recombination. In this work, we solved these problems through the functionalization of Si QDs and a ZnO barrier. Functionalized Si QDs were more adsorbed on TiO2 with strengthened adhesion and the ZnO barrier prevented the contact between TiO2 and the redox electrolyte. Consequently, the improved adhesion and the reduced electron recombination led to the enhancement of overall photovoltaic characteristics.

Original languageEnglish
Article number01AD05
JournalJapanese journal of applied physics
Volume52
Issue number1 PART2
DOIs
Publication statusPublished - Jan 1 2013

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Fingerprint Dive into the research topics of 'Improvement of Si adhesion and reduction of electron recombination for Si quantum dot-sensitized solar cells'. Together they form a unique fingerprint.

  • Cite this