We have improved surface resistance (RS) properties of ErBa2Cu3O7-δ (ErBCO) films by using BaTiO3 (BTO) doping (BTO + ErBCO). The as-grown BTO + ErBCO films did not have enough carriers. We solve this problem by using O3 + O2 as background gas during the growth of BTO + ErBCO films. Then, O3 + O2 gas is useful to grow BTO + ErBCO films with superior superconducting properties. The RS of a 2 wt.%BTO + ErBCO film is the lowest in BTO + ErBCO films grown in this study. This value is equal to that of a 1.5 wt.%BZO + ErBCO film. The microstructures of the 2 wt.%BTO + ErBCO film are observed by transmission electron microscopy (TEM). In the image, the BTO + ErBCO films did not have the same nanorods as observed in the BZO + ErBCO films against our expectation. However, precipitates that the BZO + ErBCO films do not have, are observed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Energy Engineering and Power Technology
- Electrical and Electronic Engineering