Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs

Wataru Saito, Satoshi Aida, Shigeo Koduki, Masaru Izumisawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A new MOS-gate structure was proposed and demonstrated to improve the switching trade-off characteristics between noise and loss in high-voltage MOSFETs. The lightly p-doped dummy base layer under the gate electrode modulates Cgd-Vds curve due to the depletion under high applied voltage and the turn-off dV/dt can be suppressed even with high-speed switching. The fabricated device showed the surge voltage suppression of 50 V or the turn-off loss reduction of 20% in the turn-off switching test with an inductive load. In the flyback converter operation, it was also shown that the trade-off characteristics between the radiation noise and total power loss were improved by the proposed dummy base structure.

Original languageEnglish
Title of host publicationISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs
Pages316-319
Number of pages4
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes
Event23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011 - San Diego, CA, United States
Duration: May 23 2011May 26 2011

Publication series

NameProceedings of the International Symposium on Power Semiconductor Devices and ICs
ISSN (Print)1063-6854

Conference

Conference23rd International Symposium on Power Semiconductor Devices and ICs, ISPSD 2011
CountryUnited States
CitySan Diego, CA
Period5/23/115/26/11

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Saito, W., Aida, S., Koduki, S., & Izumisawa, M. (2011). Improvement of switching trade-off characteristics between noise and loss in high voltage MOSFETs. In ISPSD 2011 - Proceedings of the 23rd International Symposium on Power Semiconductor Devices and ICs (pp. 316-319). [5890854] (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). https://doi.org/10.1109/ISPSD.2011.5890854