TY - JOUR
T1 - Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing
AU - Kim, Kwang Ho
AU - Ishiwara, Hiroshi
AU - Asano, Tanemasa
AU - Furukawa, Seijiro
PY - 1988/11
Y1 - 1988/11
N2 - The postgrowth annealing technique has been shown to be useful for improving the interface properties of fluoride films grown on GaAs(100) by molecular beam epitaxy. Annealings typically at 800°C-850°C for 1 min reduce the interface state densities of the fluoride/GaAs interface to about 5×1011/cm2eV (derived from the 1 MHz capacitance-voltage measurement) in both n- and p-type substrates. Photoluminescence intensity of the CaF2-coated GaAs was compared before and after annealing. Ambient dependency during annealing was also investigated by measuring the structural and electrical properties of the films.
AB - The postgrowth annealing technique has been shown to be useful for improving the interface properties of fluoride films grown on GaAs(100) by molecular beam epitaxy. Annealings typically at 800°C-850°C for 1 min reduce the interface state densities of the fluoride/GaAs interface to about 5×1011/cm2eV (derived from the 1 MHz capacitance-voltage measurement) in both n- and p-type substrates. Photoluminescence intensity of the CaF2-coated GaAs was compared before and after annealing. Ambient dependency during annealing was also investigated by measuring the structural and electrical properties of the films.
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U2 - 10.1143/JJAP.27.L2180
DO - 10.1143/JJAP.27.L2180
M3 - Article
AN - SCOPUS:0024105540
SN - 0021-4922
VL - 27
SP - L2180-L2182
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 11 A
ER -