Improvement of the interface properties of fluoride/gaas(100) structures by postgrowth annealing

Kwang Ho Kim, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)

Abstract

The postgrowth annealing technique has been shown to be useful for improving the interface properties of fluoride films grown on GaAs(100) by molecular beam epitaxy. Annealings typically at 800°C-850°C for 1 min reduce the interface state densities of the fluoride/GaAs interface to about 5×1011/cm2eV (derived from the 1 MHz capacitance-voltage measurement) in both n- and p-type substrates. Photoluminescence intensity of the CaF2-coated GaAs was compared before and after annealing. Ambient dependency during annealing was also investigated by measuring the structural and electrical properties of the films.

Original languageEnglish
Pages (from-to)L2180-L2182
JournalJapanese Journal of Applied Physics
Volume27
Issue number11 A
DOIs
Publication statusPublished - Nov 1988

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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