Heteroepitaxial growth of Ge films on CaF2/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry