Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Heteroepitaxial growth of Ge films on CaF2/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.

Original languageEnglish
Pages (from-to)666-670
Number of pages5
JournalSurface Science
Volume174
Issue number1-3
DOIs
Publication statusPublished - Aug 3 1986
Externally publishedYes

Fingerprint

Epitaxial growth
Ions
Crystalline materials
room temperature
ions
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers. / Kanemaru, Seigo; Ishiwara, Hiroshi; Asano, Tanemasa; Furukawa, Seijiro.

In: Surface Science, Vol. 174, No. 1-3, 03.08.1986, p. 666-670.

Research output: Contribution to journalArticle

Kanemaru, Seigo ; Ishiwara, Hiroshi ; Asano, Tanemasa ; Furukawa, Seijiro. / Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers. In: Surface Science. 1986 ; Vol. 174, No. 1-3. pp. 666-670.
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