Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru; Hiroshi Ishiwara; Tanemasa Asano; Seijiro Furukawa

doi:10.1016/0039-6028(86)90489-9

Improvement of the quality of Ge films on CaF₂/Si(111) structures by predeposited thin Ge layers

Seigo Kanemaru, Hiroshi Ishiwara, Tanemasa Asano, Seijiro Furukawa

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Heteroepitaxial growth of Ge films on CaF₂/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.

Original language	English
Pages (from-to)	666-670
Number of pages	5
Journal	Surface Science
Volume	174
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(86)90489-9
Publication status	Published - Aug 3 1986
Externally published	Yes

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(86)90489-9

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title = "Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers",

abstract = "Heteroepitaxial growth of Ge films on CaF2/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.",

author = "Seigo Kanemaru and Hiroshi Ishiwara and Tanemasa Asano and Seijiro Furukawa",

note = "Funding Information: We are grateful to the members of the steering committee and the staff of the Van de Graaff accelerator at Tokyo Institute of Technology. This work was partially supported by a 1984 Grant-in-Aid for special distinguished research (No. 59060002)f rom the Ministry of Education, Science and Culture of Japan.",

year = "1986",

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doi = "10.1016/0039-6028(86)90489-9",

language = "English",

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pages = "666--670",

journal = "Surface Science",

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T1 - Improvement of the quality of Ge films on CaF2/Si(111) structures by predeposited thin Ge layers

AU - Kanemaru, Seigo

AU - Ishiwara, Hiroshi

AU - Asano, Tanemasa

AU - Furukawa, Seijiro

N1 - Funding Information: We are grateful to the members of the steering committee and the staff of the Van de Graaff accelerator at Tokyo Institute of Technology. This work was partially supported by a 1984 Grant-in-Aid for special distinguished research (No. 59060002)f rom the Ministry of Education, Science and Culture of Japan.

PY - 1986/8/3

Y1 - 1986/8/3

N2 - Heteroepitaxial growth of Ge films on CaF2/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.

AB - Heteroepitaxial growth of Ge films on CaF2/Si structures with thin Ge layers predeposited at room temperature was investigated. It has been shown from morphological and ion channeling studies that the predeposited thin Ge layer is useful to improve the surface smoothness and crystalline quality of the Ge films. The best value of the channeling minimum yield of Ge films was 3.4%.

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DO - 10.1016/0039-6028(86)90489-9

M3 - Article

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SN - 0039-6028

VL - 174

SP - 666

EP - 670

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Improvement of the quality of Ge films on CaF₂/Si(111) structures by predeposited thin Ge layers

Abstract

All Science Journal Classification (ASJC) codes

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