Abstract
A well-known major problem in thin-film transistor (TFT) manufacturing is the protrusions that form on low-temperature polysilicon thin films after excimer laser annealing, which, in turn, induce gate leakage current in the TFTs. In this paper, we report the use of additional laser irradiation to reduce the height of protrusions.
Original language | English |
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Pages (from-to) | 322-324 |
Number of pages | 3 |
Journal | Proceedings of the International Display Workshops |
Volume | 27 |
Publication status | Published - Dec 9 2021 |
Event | 27th International Display Workshops, IDW 2020 - Virtual, Online Duration: Dec 9 2020 → Dec 11 2020 |
All Science Journal Classification (ASJC) codes
- Computer Vision and Pattern Recognition
- Human-Computer Interaction
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials