Impurity conduction in ion beam synthesized β-FeSi2/Si

Y. Murakami, Y. Tsukahara, A. Kenjo, Taizoh Sadoh, Y. Maeda, M. Miyao

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Carrier transport in ion-beam synthesized (IBS) β-FeSi2 was investigated by using Hall effect measurement at low temperatures (15-300 K). The measurement showed p-type conduction in the temperature range of 15-300 K. The Hall coefficient increased with increasing temperature up to 25 K, and then it decreased, which suggested the two carrier conduction, i.e., the impurity conduction, as well as the conduction in the valence band, play an important role in the carrier transport. Based on the two carrier model, the hole concentration and mobility for the impurity conduction at 25 K were evaluated to be 9.9×1017 cm-3 and 0.85 cm2 V -1 s-1, respectively, which suggested that the acceptors were isolated and did not form the impurity band at the impurity concentration of 9.9×1017 cm-3. Thus, the threshold concentration for the impurity band formation was more than three orders of magnitude higher than that for GaAs (2×1016 cm-3), which could be explained on the basis of the Mott criterion.

Original languageEnglish
Pages (from-to)198-201
Number of pages4
JournalThin Solid Films
Volume461
Issue number1
DOIs
Publication statusPublished - Aug 2 2004
EventProceedings of Symposium on Semiconducting Silicides - Yokohama, Japan
Duration: Oct 8 2003Oct 13 2003

Fingerprint

Ion beams
ion beams
Impurities
conduction
impurities
Carrier transport
Hall effect
Hole concentration
Hole mobility
Valence bands
Temperature
valence
thresholds
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Murakami, Y., Tsukahara, Y., Kenjo, A., Sadoh, T., Maeda, Y., & Miyao, M. (2004). Impurity conduction in ion beam synthesized β-FeSi2/Si. Thin Solid Films, 461(1), 198-201. https://doi.org/10.1016/j.tsf.2004.02.071

Impurity conduction in ion beam synthesized β-FeSi2/Si. / Murakami, Y.; Tsukahara, Y.; Kenjo, A.; Sadoh, Taizoh; Maeda, Y.; Miyao, M.

In: Thin Solid Films, Vol. 461, No. 1, 02.08.2004, p. 198-201.

Research output: Contribution to journalConference article

Murakami, Y, Tsukahara, Y, Kenjo, A, Sadoh, T, Maeda, Y & Miyao, M 2004, 'Impurity conduction in ion beam synthesized β-FeSi2/Si', Thin Solid Films, vol. 461, no. 1, pp. 198-201. https://doi.org/10.1016/j.tsf.2004.02.071
Murakami Y, Tsukahara Y, Kenjo A, Sadoh T, Maeda Y, Miyao M. Impurity conduction in ion beam synthesized β-FeSi2/Si. Thin Solid Films. 2004 Aug 2;461(1):198-201. https://doi.org/10.1016/j.tsf.2004.02.071
Murakami, Y. ; Tsukahara, Y. ; Kenjo, A. ; Sadoh, Taizoh ; Maeda, Y. ; Miyao, M. / Impurity conduction in ion beam synthesized β-FeSi2/Si. In: Thin Solid Films. 2004 ; Vol. 461, No. 1. pp. 198-201.
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AU - Miyao, M.

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AB - Carrier transport in ion-beam synthesized (IBS) β-FeSi2 was investigated by using Hall effect measurement at low temperatures (15-300 K). The measurement showed p-type conduction in the temperature range of 15-300 K. The Hall coefficient increased with increasing temperature up to 25 K, and then it decreased, which suggested the two carrier conduction, i.e., the impurity conduction, as well as the conduction in the valence band, play an important role in the carrier transport. Based on the two carrier model, the hole concentration and mobility for the impurity conduction at 25 K were evaluated to be 9.9×1017 cm-3 and 0.85 cm2 V -1 s-1, respectively, which suggested that the acceptors were isolated and did not form the impurity band at the impurity concentration of 9.9×1017 cm-3. Thus, the threshold concentration for the impurity band formation was more than three orders of magnitude higher than that for GaAs (2×1016 cm-3), which could be explained on the basis of the Mott criterion.

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