Impurity-Induced First-Order Phase Transitions in Highly Crystalline V2O3 Nanocrystals

Yoichi Ishiwata; Eiko Takahashi; Kenta Akashi; Masaki Imamura; Junpei Azuma; Kazutoshi Takahashi; Masao Kamada; Hirofumi Ishii; Yen Fa Liao; Yasuhisa Tezuka; Yuji Inagaki; Tatsuya Kawae; Daisuke Nishio-Hamane; Masashi Nantoh; Koji Ishibashi; Tetsuya Kida

doi:10.1002/admi.201500132

Impurity-Induced First-Order Phase Transitions in Highly Crystalline V₂O₃ Nanocrystals

Yoichi Ishiwata, Eiko Takahashi, Kenta Akashi, Masaki Imamura, Junpei Azuma, Kazutoshi Takahashi, Masao Kamada, Hirofumi Ishii, Yen Fa Liao, Yasuhisa Tezuka, Yuji Inagaki, Tatsuya Kawae, Daisuke Nishio-Hamane, Masashi Nantoh, Koji Ishibashi, Tetsuya Kida

Applied Physics

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

A first-order phase transition in a bulk material is generally considered to arise at extended defects such as grain boundaries or dislocations, where the energetic barrier between the two phases is reduced. Downsizing a crystal to the nanoscale can exclude the number of defects, leading to enhanced kinetic stabilization of the metastable phase. Here, the disappearance of the first-order metal-insulator transition in defect-free V₂O₃ nanocrystals and the revival of the transition by introducing a certain Cr or Ti impurity content are investigated. The hysteresis width of the transition corresponding to the barrier height decreases with the impurity content. It is proposed that homogeneous impurity doping is a universal method that can control the occurrence of a first-order phase transition in nanoscale materials.

Original language	English
Article number	1500132
Journal	Advanced Materials Interfaces
Volume	2
Issue number	12
DOIs	https://doi.org/10.1002/admi.201500132
Publication status	Published - Aug 1 2015

All Science Journal Classification (ASJC) codes

Mechanics of Materials
Mechanical Engineering

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10.1002/admi.201500132

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Ishiwata, Y., Takahashi, E., Akashi, K., Imamura, M., Azuma, J., Takahashi, K., Kamada, M., Ishii, H., Liao, Y. F., Tezuka, Y., Inagaki, Y., Kawae, T., Nishio-Hamane, D., Nantoh, M., Ishibashi, K., & Kida, T. (2015). Impurity-Induced First-Order Phase Transitions in Highly Crystalline V₂O₃ Nanocrystals. Advanced Materials Interfaces, 2(12), [1500132]. https://doi.org/10.1002/admi.201500132

Ishiwata, Y, Takahashi, E, Akashi, K, Imamura, M, Azuma, J, Takahashi, K, Kamada, M, Ishii, H, Liao, YF, Tezuka, Y, Inagaki, Y, Kawae, T, Nishio-Hamane, D, Nantoh, M, Ishibashi, K & Kida, T 2015, 'Impurity-Induced First-Order Phase Transitions in Highly Crystalline V₂O₃ Nanocrystals', Advanced Materials Interfaces, vol. 2, no. 12, 1500132. https://doi.org/10.1002/admi.201500132

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abstract = "A first-order phase transition in a bulk material is generally considered to arise at extended defects such as grain boundaries or dislocations, where the energetic barrier between the two phases is reduced. Downsizing a crystal to the nanoscale can exclude the number of defects, leading to enhanced kinetic stabilization of the metastable phase. Here, the disappearance of the first-order metal-insulator transition in defect-free V2O3 nanocrystals and the revival of the transition by introducing a certain Cr or Ti impurity content are investigated. The hysteresis width of the transition corresponding to the barrier height decreases with the impurity content. It is proposed that homogeneous impurity doping is a universal method that can control the occurrence of a first-order phase transition in nanoscale materials.",

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AU - Ishiwata, Yoichi

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AU - Imamura, Masaki

AU - Azuma, Junpei

AU - Takahashi, Kazutoshi

AU - Kamada, Masao

AU - Ishii, Hirofumi

AU - Liao, Yen Fa

AU - Tezuka, Yasuhisa

AU - Inagaki, Yuji

AU - Kawae, Tatsuya

AU - Nishio-Hamane, Daisuke

AU - Nantoh, Masashi

AU - Ishibashi, Koji

AU - Kida, Tetsuya

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Impurity-Induced First-Order Phase Transitions in Highly Crystalline V₂O₃ Nanocrystals

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