Impurity-Induced First-Order Phase Transitions in Highly Crystalline V2O3 Nanocrystals

Yoichi Ishiwata, Eiko Takahashi, Kenta Akashi, Masaki Imamura, Junpei Azuma, Kazutoshi Takahashi, Masao Kamada, Hirofumi Ishii, Yen Fa Liao, Yasuhisa Tezuka, Yuji Inagaki, Tatsuya Kawae, Daisuke Nishio-Hamane, Masashi Nantoh, Koji Ishibashi, Tetsuya Kida

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3 Citations (Scopus)

Abstract

A first-order phase transition in a bulk material is generally considered to arise at extended defects such as grain boundaries or dislocations, where the energetic barrier between the two phases is reduced. Downsizing a crystal to the nanoscale can exclude the number of defects, leading to enhanced kinetic stabilization of the metastable phase. Here, the disappearance of the first-order metal-insulator transition in defect-free V2O3 nanocrystals and the revival of the transition by introducing a certain Cr or Ti impurity content are investigated. The hysteresis width of the transition corresponding to the barrier height decreases with the impurity content. It is proposed that homogeneous impurity doping is a universal method that can control the occurrence of a first-order phase transition in nanoscale materials.

Original languageEnglish
Article number1500132
JournalAdvanced Materials Interfaces
Volume2
Issue number12
DOIs
Publication statusPublished - Aug 1 2015

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All Science Journal Classification (ASJC) codes

  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Ishiwata, Y., Takahashi, E., Akashi, K., Imamura, M., Azuma, J., Takahashi, K., ... Kida, T. (2015). Impurity-Induced First-Order Phase Transitions in Highly Crystalline V2O3 Nanocrystals. Advanced Materials Interfaces, 2(12), [1500132]. https://doi.org/10.1002/admi.201500132