Abstract
Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.
| Original language | English |
|---|---|
| Pages (from-to) | 3251-3256 |
| Number of pages | 6 |
| Journal | Journal of Crystal Growth |
| Volume | 312 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - Oct 15 2010 |
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All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Inorganic Chemistry
- Materials Chemistry
Cite this
Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires. / Klamchuen, Annop; Yanagida, Takeshi; Kanai, Masaki; Nagashima, Kazuki; Oka, Keisuke; Kawai, Tomoji; Suzuki, Masaru; Hidaka, Yoshiki; Kai, Shoichi.
In: Journal of Crystal Growth, Vol. 312, No. 21, 15.10.2010, p. 3251-3256.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires
AU - Klamchuen, Annop
AU - Yanagida, Takeshi
AU - Kanai, Masaki
AU - Nagashima, Kazuki
AU - Oka, Keisuke
AU - Kawai, Tomoji
AU - Suzuki, Masaru
AU - Hidaka, Yoshiki
AU - Kai, Shoichi
PY - 2010/10/15
Y1 - 2010/10/15
N2 - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.
AB - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.
UR - http://www.scopus.com/inward/record.url?scp=77956876608&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77956876608&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2010.08.011
DO - 10.1016/j.jcrysgro.2010.08.011
M3 - Article
AN - SCOPUS:77956876608
VL - 312
SP - 3251
EP - 3256
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 21
ER -