Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

Original languageEnglish
Pages (from-to)3251-3256
Number of pages6
JournalJournal of Crystal Growth
Volume312
Issue number21
DOIs
Publication statusPublished - Oct 15 2010

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Nanowires
nanowires
Doping (additives)
Impurities
impurities
Transport properties
transport properties
Semiconductor materials
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires. / Klamchuen, Annop; Yanagida, Takeshi; Kanai, Masaki; Nagashima, Kazuki; Oka, Keisuke; Kawai, Tomoji; Suzuki, Masaru; Hidaka, Yoshiki; Kai, Shoichi.

In: Journal of Crystal Growth, Vol. 312, No. 21, 15.10.2010, p. 3251-3256.

Research output: Contribution to journalArticle

Klamchuen, Annop ; Yanagida, Takeshi ; Kanai, Masaki ; Nagashima, Kazuki ; Oka, Keisuke ; Kawai, Tomoji ; Suzuki, Masaru ; Hidaka, Yoshiki ; Kai, Shoichi. / Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires. In: Journal of Crystal Growth. 2010 ; Vol. 312, No. 21. pp. 3251-3256.
@article{9f97a03629704dbb932e96ceca0185db,
title = "Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires",
abstract = "Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.",
author = "Annop Klamchuen and Takeshi Yanagida and Masaki Kanai and Kazuki Nagashima and Keisuke Oka and Tomoji Kawai and Masaru Suzuki and Yoshiki Hidaka and Shoichi Kai",
year = "2010",
month = "10",
day = "15",
doi = "10.1016/j.jcrysgro.2010.08.011",
language = "English",
volume = "312",
pages = "3251--3256",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "21",

}

TY - JOUR

T1 - Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

AU - Klamchuen, Annop

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Nagashima, Kazuki

AU - Oka, Keisuke

AU - Kawai, Tomoji

AU - Suzuki, Masaru

AU - Hidaka, Yoshiki

AU - Kai, Shoichi

PY - 2010/10/15

Y1 - 2010/10/15

N2 - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

AB - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

UR - http://www.scopus.com/inward/record.url?scp=77956876608&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956876608&partnerID=8YFLogxK

U2 - 10.1016/j.jcrysgro.2010.08.011

DO - 10.1016/j.jcrysgro.2010.08.011

M3 - Article

AN - SCOPUS:77956876608

VL - 312

SP - 3251

EP - 3256

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 21

ER -