Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

Annop Klamchuen; Takeshi Yanagida; Masaki Kanai; Kazuki Nagashima; Keisuke Oka; Tomoji Kawai; Masaru Suzuki; Yoshiki Hidaka; Shoichi Kai

doi:10.1016/j.jcrysgro.2010.08.011

Impurity induced periodic mesostructures in Sb-doped SnO₂ nanowires

Annop Klamchuen, Takeshi Yanagida, Masaki Kanai, Kazuki Nagashima, Keisuke Oka, Tomoji Kawai, Masaru Suzuki, Yoshiki Hidaka, Shoichi Kai

Applied Physics

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO₂ nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

Original language	English
Pages (from-to)	3251-3256
Number of pages	6
Journal	Journal of Crystal Growth
Volume	312
Issue number	21
DOIs	https://doi.org/10.1016/j.jcrysgro.2010.08.011
Publication status	Published - Oct 15 2010

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2010.08.011

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abstract = "Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.",

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T1 - Impurity induced periodic mesostructures in Sb-doped SnO2 nanowires

AU - Klamchuen, Annop

AU - Yanagida, Takeshi

AU - Kanai, Masaki

AU - Nagashima, Kazuki

AU - Oka, Keisuke

AU - Kawai, Tomoji

AU - Suzuki, Masaru

AU - Hidaka, Yoshiki

AU - Kai, Shoichi

PY - 2010/10/15

Y1 - 2010/10/15

N2 - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

AB - Impurity doping on semiconductor nanowires formed via vaporliquidsolid (VLS) mechanism has been investigated with the intention being to control the transport properties. Here we demonstrate that an addition of excess impurity dopants induces a mesostructure of long range periodic arched-shape in Sb-doped SnO2 nanowires. The microstructural and composition analysis demonstrated the importance of the presence of impurities at the growth interface during VLS growth rather than the dopant incorporation into nanowires, indicating kinetically induced mechanisms.

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JF - Journal of Crystal Growth

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Impurity induced periodic mesostructures in Sb-doped SnO₂ nanowires

Abstract

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