Impurity levels in layer semiconductor p-GaSe doped with Mn

S. Shigetomi, T. Ikari, Hiroshi Nakashima

    Research output: Contribution to journalArticle

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    Abstract

    The impurity levels in Mn-doped GaSe have been investigated by using photoluminescence (PL), Hall effect (HE), and deep-level transient spectroscopy (DLTS) measurements. The emission band at 1.82 eV is observed on the PL spectra of the samples doped with Mn of wide range from 0.01 to 1.0 at. %. We find, from the temperature dependences of PL intensity and peak energy, that the 1.82 eV emission band is due to the transition between the conduction band and the acceptor level at 0.32 eV above the valence band. The acceptor level located at about 0.34 eV above the valence band is detected by using HE and DLTS measurements. The dominant acceptor level in the carrier transport shows almost the same position as that of the radiative recombination center. This acceptor level is probably associated with the defects formed by Mn atoms in the interlayer or interstices.

    Original languageEnglish
    Pages (from-to)310-314
    Number of pages5
    JournalJournal of Applied Physics
    Volume76
    Issue number1
    DOIs
    Publication statusPublished - Dec 1 1994

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    impurities
    photoluminescence
    Hall effect
    valence
    interstices
    radiative recombination
    spectroscopy
    interlayers
    conduction bands
    temperature dependence
    defects
    atoms
    energy

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy(all)

    Cite this

    Impurity levels in layer semiconductor p-GaSe doped with Mn. / Shigetomi, S.; Ikari, T.; Nakashima, Hiroshi.

    In: Journal of Applied Physics, Vol. 76, No. 1, 01.12.1994, p. 310-314.

    Research output: Contribution to journalArticle

    Shigetomi, S. ; Ikari, T. ; Nakashima, Hiroshi. / Impurity levels in layer semiconductor p-GaSe doped with Mn. In: Journal of Applied Physics. 1994 ; Vol. 76, No. 1. pp. 310-314.
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