Impurity levels in p-type layered semiconductor InSe doped with Hg

S. Shigetomi, T. Ikari, H. Nakashima

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    Photoluminescence (PL) and Hall effect measurements have been made on Hg-doped p-type InSe. A broad emission band at 1.237 eV (77 K) is mainly observed on the PL spectra of samples doped with Hg and, in the range 0.02 to 0.1 at%, the PL intensity increases with increasing Hg concentration. From the temperature dependences of the PL intensity and peak energy position, we show that the 1.237 eV emission band is due to the transition between a shallow donor level and a deep acceptor level, at 0.07 eV above the valence band. The dominant acceptor level in the carrier transport measurements shows the same energy position as the radiative recombination center.

    Original languageEnglish
    Pages (from-to)93-99
    Number of pages7
    JournalPhysica Status Solidi (B) Basic Research
    Volume209
    Issue number1
    DOIs
    Publication statusPublished - Sep 1998

    All Science Journal Classification (ASJC) codes

    • Electronic, Optical and Magnetic Materials
    • Condensed Matter Physics

    Fingerprint Dive into the research topics of 'Impurity levels in p-type layered semiconductor InSe doped with Hg'. Together they form a unique fingerprint.

    Cite this