In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

High-quality Ge-on-insulator (GOI) structures are essential to realize next-generation large-scale integrated circuits, where GOI is employed as active layers of functional devices, as well as buffer layers for epitaxial growth of functional materials. In line with this, in-depth analysis of crystallinity of rapid-melting-grown GOI is performed. Structural and electrical measurements combined with a thinning technique reveal that the crystallinity of GOI (500 nm thickness) is very high and uniform in-depth direction, where high hole mobility (∼ 1000 cm2/V s) is achieved throughout the grown layers. These findings open up a possibility of application of rapid-melting-grown GOI to various advanced functional devices.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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