In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth

H. Chikita, R. Matsumura, Y. Tojo, H. Yokoyama, T. Sadoh, M. Miyao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

High-quality Ge-on-insulator (GOI) structures are essential to realize next-generation large-scale integrated circuits, where GOI is employed as active layers of functional devices, as well as buffer layers for epitaxial growth of functional materials. In line with this, in-depth analysis of crystallinity of rapid-melting-grown GOI is performed. Structural and electrical measurements combined with a thinning technique reveal that the crystallinity of GOI (500 nm thickness) is very high and uniform in-depth direction, where high hole mobility (∼ 1000 cm2/V s) is achieved throughout the grown layers. These findings open up a possibility of application of rapid-melting-grown GOI to various advanced functional devices.

Original languageEnglish
Pages (from-to)139-142
Number of pages4
JournalThin Solid Films
Volume557
DOIs
Publication statusPublished - Apr 30 2014

Fingerprint

Melting
melting
insulators
Hole mobility
Functional materials
Buffer layers
Epitaxial growth
Integrated circuits
crystallinity
hole mobility
electrical measurement
integrated circuits
buffers
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth. / Chikita, H.; Matsumura, R.; Tojo, Y.; Yokoyama, H.; Sadoh, T.; Miyao, M.

In: Thin Solid Films, Vol. 557, 30.04.2014, p. 139-142.

Research output: Contribution to journalArticle

Chikita, H. ; Matsumura, R. ; Tojo, Y. ; Yokoyama, H. ; Sadoh, T. ; Miyao, M. / In-depth analysis of high-quality Ge-on-insulator structure formed by rapid-melting growth. In: Thin Solid Films. 2014 ; Vol. 557. pp. 139-142.
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