In-plane orientation control of c-axis oriented YBa2Cu3O7-δ films on MgO substrates by BaSnO3 buffer layers

Masashi Mukaida, Yoshinobu Takano, Kazuaki Chiba, Takuo Moriya, Masanobu Kusunoki, Shigetoshi Ohshima

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18 Citations (Scopus)


A new BaSnO3 buffer layer is proposed for controlling the in-plane orientation of YBa2Cu3O7-δ films grown on MgO substrates. BaSnO3 buffer layers and YBa2Cu3O7-δ films are grown by pulsed laser deposition. 45° grain boundaries in YBa2Cu3O7-δ films grown on MgO (001) substrates, which are fatal defects for microwave device applications, are eliminated using the BaSnO3 buffer layer. YBa2Cu3O7-δ films grown at an optimum growth temperature of 710°C on BaSnO3 buffer layers on MgO (001) substrates show lower surface resistance (RS) than those on MgO (001) substrates without BaSnO3 buffer layers.

Original languageEnglish
Pages (from-to)L926-L928
JournalJapanese Journal of Applied Physics, Part 2: Letters
Issue number8 B
Publication statusPublished - Aug 1 1999
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)


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