In-plane orientation of C-axis oriented YBa2Cu3Ox films on MgO substrates

Masashi Mukaida; Yoshinobu Takano; Kazuaki Chiba; Masanobu Kusunoki; Shigetoshi Ohshima

In-plane orientation of C-axis oriented YBa₂Cu₃O_x films on MgO substrates

Masashi Mukaida, Yoshinobu Takano, Kazuaki Chiba, Masanobu Kusunoki, Shigetoshi Ohshima

Research output: Contribution to journal › Article › peer-review

Abstract

The appearance of 45° grain boundaries in c-axis oriented YBa₂Cu₃O_x films grown by pulsed laser deposition on MgO (001) substrates is discussed. X-ray φ-scan (in-plane orientation) measurements have revealed that YBa₂Cu₃O_x films grown at around 700°C have two types of grains with [100]_Mgo ∥ [100]_YBCO and [110]_MgO ∥ [100]_YBCO in-plane epitaxial relationships. A plausible growth model is proposed from the viewpoints of lattice matching and ionic adhesive energy. The ratio of 0° and 45° grains is found to be a function of the substrate temperature. By decreasing the substrate temperature, we obtained c-axis oriented YBa₂Cu₃O_x thin films with only a [100]_Mgo ∥ [100]_YBCO in-plane epitaxial relation. We have eliminated the 45° grain boundaries which drastically increase the surface resistance of the YBa₂Cu₃O_x films for microwave applications.

Original language	English
Pages (from-to)	1945-1948
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 A
Publication status	Published - Dec 1 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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In-plane orientation of C-axis oriented YBa₂Cu₃O_x films on MgO substrates. / Mukaida, Masashi; Takano, Yoshinobu; Chiba, Kazuaki; Kusunoki, Masanobu; Ohshima, Shigetoshi.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 4 A, 01.12.1999, p. 1945-1948.

Research output: Contribution to journal › Article › peer-review

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abstract = "The appearance of 45° grain boundaries in c-axis oriented YBa2Cu3Ox films grown by pulsed laser deposition on MgO (001) substrates is discussed. X-ray φ-scan (in-plane orientation) measurements have revealed that YBa2Cu3Ox films grown at around 700°C have two types of grains with [100]Mgo ∥ [100]YBCO and [110]MgO ∥ [100]YBCO in-plane epitaxial relationships. A plausible growth model is proposed from the viewpoints of lattice matching and ionic adhesive energy. The ratio of 0° and 45° grains is found to be a function of the substrate temperature. By decreasing the substrate temperature, we obtained c-axis oriented YBa2Cu3Ox thin films with only a [100]Mgo ∥ [100]YBCO in-plane epitaxial relation. We have eliminated the 45° grain boundaries which drastically increase the surface resistance of the YBa2Cu3Ox films for microwave applications.",

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N2 - The appearance of 45° grain boundaries in c-axis oriented YBa2Cu3Ox films grown by pulsed laser deposition on MgO (001) substrates is discussed. X-ray φ-scan (in-plane orientation) measurements have revealed that YBa2Cu3Ox films grown at around 700°C have two types of grains with [100]Mgo ∥ [100]YBCO and [110]MgO ∥ [100]YBCO in-plane epitaxial relationships. A plausible growth model is proposed from the viewpoints of lattice matching and ionic adhesive energy. The ratio of 0° and 45° grains is found to be a function of the substrate temperature. By decreasing the substrate temperature, we obtained c-axis oriented YBa2Cu3Ox thin films with only a [100]Mgo ∥ [100]YBCO in-plane epitaxial relation. We have eliminated the 45° grain boundaries which drastically increase the surface resistance of the YBa2Cu3Ox films for microwave applications.

AB - The appearance of 45° grain boundaries in c-axis oriented YBa2Cu3Ox films grown by pulsed laser deposition on MgO (001) substrates is discussed. X-ray φ-scan (in-plane orientation) measurements have revealed that YBa2Cu3Ox films grown at around 700°C have two types of grains with [100]Mgo ∥ [100]YBCO and [110]MgO ∥ [100]YBCO in-plane epitaxial relationships. A plausible growth model is proposed from the viewpoints of lattice matching and ionic adhesive energy. The ratio of 0° and 45° grains is found to be a function of the substrate temperature. By decreasing the substrate temperature, we obtained c-axis oriented YBa2Cu3Ox thin films with only a [100]Mgo ∥ [100]YBCO in-plane epitaxial relation. We have eliminated the 45° grain boundaries which drastically increase the surface resistance of the YBa2Cu3Ox films for microwave applications.

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