In-situ electron microscopy of cu movement in MoOx/Al2O3 bilayer CBRAM during cyclic switching

R. Ishikawa, S. Hirata, A. Tsurumaki-Fukuchi, M. Arita, Y. Takahashi, M. Kudo, S. Matsumura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In-situ TEM (transmission electron microscopy) was applied to Cu/MoOx/Al2O3 bilayer CBRAM and the change of the Cu microstructure were observed during cyclic Set/Reset switching. In the Set process giving the low resistance state (LRS), a dark contrast appeared in Al2O3 layer, and in the Reset process giving the high resistance state (HRS), it almost disappeared. This result means that the resistance changed by formation and rupture of the conducting filament. In our MoOx/Al2O3 CBRAMs, cyclic Set/Reset operations were achieved with the real-time TEM observations. During the cycles, device degradation, i.e., gradual decrease in the resistance in the cyclic operation was observed in the both HRS and LRS. We confirmed that the contrast of the Cu layer and the Al2O3 layer had changed while the device degraded.

Original languageEnglish
Title of host publicationECS Transactions
EditorsA. P. Abbott, R. Alkire, P. Allongue, T. J. Anderson, P. N. Bartlett, M. Bayachou, S. Bhansali, N. Birbilis, A. B. Bocarsly, C. Bock, O. V. Boltalina, S. Brankovic, R. Buchheit, D. A. Buttry, S. Calabrese Barton, M. T. Carter, V. Chaitanya, G. T. Cheek, Z. Chen, D. Chidambaram, B. A. Chin, J. W. Choi, D. Chu, D. E. Cliffel, H. Deligianni, V. Di Noto, N. Dimitrov, M. Doeff, E. A. Douglas, T. Druffel, K. Edstrom, J. M. Fenton, J. Fergus, J. Fransaer, Y. Fukunaka, D. Guyomard, H. Hamada, L. M. Haverhals, P. Hesketh, A. C. Hillier, J. K. Hite, H. Imahori, M. Inaba, M. Innocenti, M. Itagaki, C. Johnson, H. Katayama, S. H. Kilgore, D. J. Kim, J. Koehne, R. Kostecki, G. Krumdick, P. J. Kulesza, J. Leddy, J. J. Lee, O. Leonte, Y. C. Lu, B. L. Lucht, R. P. Lynch, M. Manivannan, R. A. Mantz, P. Marcus, V. Maurice, M. Mauter, J. Mauzeroll, H. N. McMurray, Y. S. Meng, E. L. Miller, I. Milosev, S. D. Minteer, S. Mitra, S. Mukerjee, R. Mukundan, J. Muldoon, L. Nagahara, S. R. Narayan, P. M. Natishan, M. Navaei, J. D. Nicholas, J. Noel, S. S. Nonnenmann, C. O'Dwyer, M. E. Orazem, Y. Oren, J. G. Park, P. Pharkya, P. N. Pintauro, S. Pylypenko, K. Rajeshwar, R. P. Ramasamy, C. Rhodes, D. P. Riemer, D. Roeper, M. Rohwerder, L. Romankiw, S. V. Rotkin, J. L. M. Rupp, M. J. Sailor, D. T. Schwartz, P. K. Sekhar, N. Sharma, A. Simonian, D. K. Smith, K. C. Smith, L. Soleymani, G. R. Stafford, J. A. Staser, V. Subramanian, V. R. Subramanian, K. B. Sundaram, A. H. Suroviec, K. Suto, M. Tao, T. Tatsuma, P. C. Trulove, P. Vanysek, N. Vasiljevic, J. T. Vaughey, S. Virtanen, H. Wang, W. Wang, J. F. Whitacre, G. Williams, M. Winter, D. L. Wood, G. Wu, N. Wu, J. Xiao, Y. Xing, H. Xu, J. J. Yang, G. Zangari
PublisherElectrochemical Society Inc.
Pages903-910
Number of pages8
Edition10
ISBN (Electronic)9781607688273
ISBN (Print)9781623324797
DOIs
Publication statusPublished - 2017
Event232nd ECS Meeting - National Harbor, United States
Duration: Oct 1 2017Oct 5 2017

Publication series

NameECS Transactions
Number10
Volume80
ISSN (Print)1938-6737
ISSN (Electronic)1938-5862

Other

Other232nd ECS Meeting
Country/TerritoryUnited States
CityNational Harbor
Period10/1/1710/5/17

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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