In situ FT-IR reflective absorption spectroscopy for characterization of SiO 2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma

Katsuhiko Furukawa, Yichun Liu, Dawei Gao, Hiroshi Nakashima, Kiichiro Uchino, Katsunori Muraoka

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Plasma conditions for depositing high quality SiO 2 thin films using a sputtering-type ECR (electron cyclotron resonance) method have been investigated. Film properties have been studied as a function of an oxygen flow rate, F O2 , in the range 2-8 sccm with a constant Ar flow rate of 16 sccm. Dielectric breakdown characteristics have been investigated by ramp I-V measurements, indicating that the film prepared with F O2 = 8 sccm to the thickness of 412 Å have a good dielectric breakdown field of 8-10 MV/cm. The deposited films were characterized in terms of refractive index and IR (infra-red) properties using FT-IRRAS (Fourier transform infrared reflective absorption spectroscopy) and ellipsometry. The refractive index of films deposited with more than F O2 = 3 sccm is close to 1.46 which indicates that the films prepared in this range are approximately stoichiometric. In addition, quantitative analysis of the dominant IR (infra-red) mode shows that the peak frequency and FWHM (full width at half-maximum) of a TO (transverse optical phonon) mode for films prepared with more than F O2 = 6 sccm are comparable with thermally grown SiO 2 , i.e. v = 1075 cm -1 and FWHM = 70 cm -1 . These observations indicate the optimum operating condition of the sputtering-type ECR apparatus, at which it can produce high quality films for MOS (metal-oxide semiconductor) device manufacture without the need for substrate heating.

Original languageEnglish
Pages (from-to)228-232
Number of pages5
JournalApplied Surface Science
Volume121-122
DOIs
Publication statusPublished - Nov 1997

Fingerprint

Electron cyclotron resonance
Absorption spectroscopy
Sputtering
Microwaves
Infrared radiation
Plasmas
Thin films
Full width at half maximum
Electric breakdown
Semiconductor device manufacture
Refractive index
Flow rate
MOS devices
Ellipsometry
Fourier transforms
Oxygen
Heating
Substrates
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

@article{8536960537b44cdcb9a0d06fab94a1fa,
title = "In situ FT-IR reflective absorption spectroscopy for characterization of SiO 2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma",
abstract = "Plasma conditions for depositing high quality SiO 2 thin films using a sputtering-type ECR (electron cyclotron resonance) method have been investigated. Film properties have been studied as a function of an oxygen flow rate, F O2 , in the range 2-8 sccm with a constant Ar flow rate of 16 sccm. Dielectric breakdown characteristics have been investigated by ramp I-V measurements, indicating that the film prepared with F O2 = 8 sccm to the thickness of 412 {\AA} have a good dielectric breakdown field of 8-10 MV/cm. The deposited films were characterized in terms of refractive index and IR (infra-red) properties using FT-IRRAS (Fourier transform infrared reflective absorption spectroscopy) and ellipsometry. The refractive index of films deposited with more than F O2 = 3 sccm is close to 1.46 which indicates that the films prepared in this range are approximately stoichiometric. In addition, quantitative analysis of the dominant IR (infra-red) mode shows that the peak frequency and FWHM (full width at half-maximum) of a TO (transverse optical phonon) mode for films prepared with more than F O2 = 6 sccm are comparable with thermally grown SiO 2 , i.e. v = 1075 cm -1 and FWHM = 70 cm -1 . These observations indicate the optimum operating condition of the sputtering-type ECR apparatus, at which it can produce high quality films for MOS (metal-oxide semiconductor) device manufacture without the need for substrate heating.",
author = "Katsuhiko Furukawa and Yichun Liu and Dawei Gao and Hiroshi Nakashima and Kiichiro Uchino and Katsunori Muraoka",
year = "1997",
month = "11",
doi = "10.1016/S0169-4332(97)00294-8",
language = "English",
volume = "121-122",
pages = "228--232",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - In situ FT-IR reflective absorption spectroscopy for characterization of SiO 2 thin films deposited using sputtering-type electron cyclotron resonance microwave plasma

AU - Furukawa, Katsuhiko

AU - Liu, Yichun

AU - Gao, Dawei

AU - Nakashima, Hiroshi

AU - Uchino, Kiichiro

AU - Muraoka, Katsunori

PY - 1997/11

Y1 - 1997/11

N2 - Plasma conditions for depositing high quality SiO 2 thin films using a sputtering-type ECR (electron cyclotron resonance) method have been investigated. Film properties have been studied as a function of an oxygen flow rate, F O2 , in the range 2-8 sccm with a constant Ar flow rate of 16 sccm. Dielectric breakdown characteristics have been investigated by ramp I-V measurements, indicating that the film prepared with F O2 = 8 sccm to the thickness of 412 Å have a good dielectric breakdown field of 8-10 MV/cm. The deposited films were characterized in terms of refractive index and IR (infra-red) properties using FT-IRRAS (Fourier transform infrared reflective absorption spectroscopy) and ellipsometry. The refractive index of films deposited with more than F O2 = 3 sccm is close to 1.46 which indicates that the films prepared in this range are approximately stoichiometric. In addition, quantitative analysis of the dominant IR (infra-red) mode shows that the peak frequency and FWHM (full width at half-maximum) of a TO (transverse optical phonon) mode for films prepared with more than F O2 = 6 sccm are comparable with thermally grown SiO 2 , i.e. v = 1075 cm -1 and FWHM = 70 cm -1 . These observations indicate the optimum operating condition of the sputtering-type ECR apparatus, at which it can produce high quality films for MOS (metal-oxide semiconductor) device manufacture without the need for substrate heating.

AB - Plasma conditions for depositing high quality SiO 2 thin films using a sputtering-type ECR (electron cyclotron resonance) method have been investigated. Film properties have been studied as a function of an oxygen flow rate, F O2 , in the range 2-8 sccm with a constant Ar flow rate of 16 sccm. Dielectric breakdown characteristics have been investigated by ramp I-V measurements, indicating that the film prepared with F O2 = 8 sccm to the thickness of 412 Å have a good dielectric breakdown field of 8-10 MV/cm. The deposited films were characterized in terms of refractive index and IR (infra-red) properties using FT-IRRAS (Fourier transform infrared reflective absorption spectroscopy) and ellipsometry. The refractive index of films deposited with more than F O2 = 3 sccm is close to 1.46 which indicates that the films prepared in this range are approximately stoichiometric. In addition, quantitative analysis of the dominant IR (infra-red) mode shows that the peak frequency and FWHM (full width at half-maximum) of a TO (transverse optical phonon) mode for films prepared with more than F O2 = 6 sccm are comparable with thermally grown SiO 2 , i.e. v = 1075 cm -1 and FWHM = 70 cm -1 . These observations indicate the optimum operating condition of the sputtering-type ECR apparatus, at which it can produce high quality films for MOS (metal-oxide semiconductor) device manufacture without the need for substrate heating.

UR - http://www.scopus.com/inward/record.url?scp=18544408958&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18544408958&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(97)00294-8

DO - 10.1016/S0169-4332(97)00294-8

M3 - Article

AN - SCOPUS:18544408958

VL - 121-122

SP - 228

EP - 232

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -