In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization

Ken Ichi Ikeda, Takeshi Hirota, Kensuke Fujimoto, Youhei Sugimoto, Naoki Takata, Seiichiro Ii, Hideharu Nakashima, Hiroshi Nakashima

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.

Original languageEnglish
Pages (from-to)158-163
Number of pages6
JournalNippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals
Volume71
Issue number2
DOIs
Publication statusPublished - Feb 1 2007

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Crystallization
Aluminum
Polysilicon
Energy dispersive spectroscopy
crystallization
Transmission electron microscopy
aluminum
Heating
Thin films
transmission electron microscopy
heating
silicon
thin films
X ray spectroscopy
Phase diagrams
phase diagrams
Annealing
Crystalline materials
annealing
Electrons

All Science Journal Classification (ASJC) codes

  • Metals and Alloys

Cite this

In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization. / Ikeda, Ken Ichi; Hirota, Takeshi; Fujimoto, Kensuke; Sugimoto, Youhei; Takata, Naoki; Ii, Seiichiro; Nakashima, Hideharu; Nakashima, Hiroshi.

In: Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals, Vol. 71, No. 2, 01.02.2007, p. 158-163.

Research output: Contribution to journalArticle

@article{8f198c0b2a6e4e95a6de4c26b687af62,
title = "In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization",
abstract = "The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.",
author = "Ikeda, {Ken Ichi} and Takeshi Hirota and Kensuke Fujimoto and Youhei Sugimoto and Naoki Takata and Seiichiro Ii and Hideharu Nakashima and Hiroshi Nakashima",
year = "2007",
month = "2",
day = "1",
doi = "10.2320/jinstmet.71.158",
language = "English",
volume = "71",
pages = "158--163",
journal = "Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals",
issn = "0021-4876",
publisher = "公益社団法人 日本金属学会",
number = "2",

}

TY - JOUR

T1 - In-situ heating observation for formation behavior of polycrystalline silicon thin films fabricated using aluminum induced crystallization

AU - Ikeda, Ken Ichi

AU - Hirota, Takeshi

AU - Fujimoto, Kensuke

AU - Sugimoto, Youhei

AU - Takata, Naoki

AU - Ii, Seiichiro

AU - Nakashima, Hideharu

AU - Nakashima, Hiroshi

PY - 2007/2/1

Y1 - 2007/2/1

N2 - The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.

AB - The formation behavior of polycrystalline silicon thin films during the aluminum induced crystallization (AIC) was investigated by in-situ heating transmission electron microscopy (TEM). The electron dispersive X-ray spectroscopy (EDS) analysis of annealed sample was showed that layer exchange of the a-Si/Al film is occurred during the annealing. Furthermore, from the in-situ heating TEM observation and EDS analysis of as-deposited sample, it was confirmed the co-existence of Si and Al in a-Si/Al film and the lateral growth of crystalline Si grain. The mechanism of AIC and layer exchange were discussed from the experimental results and the phase diagram of Al-Si system.

UR - http://www.scopus.com/inward/record.url?scp=34047117718&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34047117718&partnerID=8YFLogxK

U2 - 10.2320/jinstmet.71.158

DO - 10.2320/jinstmet.71.158

M3 - Article

VL - 71

SP - 158

EP - 163

JO - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

JF - Nippon Kinzoku Gakkaishi/Journal of the Japan Institute of Metals

SN - 0021-4876

IS - 2

ER -