In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)

Abstract

High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalApplied Surface Science
Volume121-122
DOIs
Publication statusPublished - Nov 1997

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Fingerprint Dive into the research topics of 'In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma'. Together they form a unique fingerprint.

Cite this