In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Y. C. Liu, Katsuhiko Furukawa, D. W. Gao, Hiroshi Nakashima, Kiichiro Uchino, K. Muraoka

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

Original languageEnglish
Pages (from-to)233-236
Number of pages4
JournalApplied Surface Science
Volume121-122
DOIs
Publication statusPublished - Jan 1 1997

Fingerprint

Electron cyclotron resonance
Absorption spectroscopy
Sputtering
Fourier transforms
Microwaves
Infrared radiation
Plasmas
Infrared spectrometers
Argon
Amorphous silicon
Silicon nitride
Stretching
Film thickness
Nitrogen
Gases
Heating
Microstructure
Monitoring
Substrates

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

@article{f26809ca441f49a2889178111350a7bf,
title = "In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma",
abstract = "High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.",
author = "Liu, {Y. C.} and Katsuhiko Furukawa and Gao, {D. W.} and Hiroshi Nakashima and Kiichiro Uchino and K. Muraoka",
year = "1997",
month = "1",
day = "1",
doi = "10.1016/S0169-4332(97)00295-X",
language = "English",
volume = "121-122",
pages = "233--236",
journal = "Applied Surface Science",
issn = "0169-4332",
publisher = "Elsevier",

}

TY - JOUR

T1 - In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

AU - Liu, Y. C.

AU - Furukawa, Katsuhiko

AU - Gao, D. W.

AU - Nakashima, Hiroshi

AU - Uchino, Kiichiro

AU - Muraoka, K.

PY - 1997/1/1

Y1 - 1997/1/1

N2 - High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

AB - High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

UR - http://www.scopus.com/inward/record.url?scp=0031549848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031549848&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(97)00295-X

DO - 10.1016/S0169-4332(97)00295-X

M3 - Article

AN - SCOPUS:0031549848

VL - 121-122

SP - 233

EP - 236

JO - Applied Surface Science

JF - Applied Surface Science

SN - 0169-4332

ER -