In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Y. C. Liu; K. Furukawa; D. W. Gao; H. Nakashima; K. Uchino; K. Muraoka

doi:10.1016/S0169-4332(97)00295-X

In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Y. C. Liu, K. Furukawa, D. W. Gao, H. Nakashima, K. Uchino, K. Muraoka

Electrical Engineering Sciences

Research output: Contribution to journal › Article › peer-review

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Abstract

High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si _x N _y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si _x N _y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

Original language	English
Pages (from-to)	233-236
Number of pages	4
Journal	Applied Surface Science
Volume	121-122
DOIs	https://doi.org/10.1016/S0169-4332(97)00295-X
Publication status	Published - Nov 1997

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Physics and Astronomy(all)
Surfaces and Interfaces
Surfaces, Coatings and Films

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10.1016/S0169-4332(97)00295-X

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@article{f26809ca441f49a2889178111350a7bf,

title = "In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma",

abstract = " High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.",

author = "Liu, {Y. C.} and K. Furukawa and Gao, {D. W.} and H. Nakashima and K. Uchino and K. Muraoka",

year = "1997",

month = nov,

doi = "10.1016/S0169-4332(97)00295-X",

language = "English",

volume = "121-122",

pages = "233--236",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier",

}

TY - JOUR

T1 - In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

AU - Liu, Y. C.

AU - Furukawa, K.

AU - Gao, D. W.

AU - Nakashima, H.

AU - Uchino, K.

AU - Muraoka, K.

PY - 1997/11

Y1 - 1997/11

N2 - High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

AB - High quality amorphous silicon nitride films have been deposited, without substrate heating, using a sputtering-type electron cyclotron resonance (ECR) microwave plasma. The compositional and structural characterizations have been made by means of a Fourier transform infrared (FT-IR) spectrometer and an ellipsometer. The correlation between the microstructure of a-Si x N y films and nitrogen gas fraction relative to argon (N2/Ar) is discussed. In-situ Fourier transform infrared reflection absorption spectroscopy (ISFT-IRRAS) has been used to study the properties of a-Si x N y /Si interface. The results from ISFT-IRRAS monitoring indicate that the broadening of a Si-N stretching vibration mode, induced by interface stress, decreases with increased film thickness.

UR - http://www.scopus.com/inward/record.url?scp=0031549848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031549848&partnerID=8YFLogxK

U2 - 10.1016/S0169-4332(97)00295-X

DO - 10.1016/S0169-4332(97)00295-X

M3 - Article

AN - SCOPUS:0031549848

SN - 0169-4332

VL - 121-122

SP - 233

EP - 236

JO - Applied Surface Science

JF - Applied Surface Science

ER -

In-situ infrared reflective absorption spectroscopy characterization of SiN films deposited using sputtering-type ECR microwave plasma

Abstract

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