In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals

Y. Miyamura, H. Harada, X. Liu, S. Nakano, Shinichi Nishizawa, Koichi Kakimoto

Research output: Contribution to journalArticle

Abstract

Power devices with high-performance require long carrier lifetimes within their silicon crystals. This paper reports the in-situ measurement of carbon monoxide in a Czochralski growth furnace of silicon single crystals. Moreover, this paper reports analytical investigation on contamination to silicon melt as functions of pressure in the furnace, argon gas flow velocity and gap width between the melt and a thermal shield. The experimental results show the carbon contamination to the melt increases when the pressure increases and the flow rate decreases. Increase of the gap width increases the contamination of carbon. We could explain the results qualitatively using a simple transport model.

Original languageEnglish
Pages (from-to)154-156
Number of pages3
JournalJournal of Crystal Growth
Volume507
DOIs
Publication statusPublished - Feb 1 2019

Fingerprint

Silicon
Carbon Monoxide
in situ measurement
furnaces
contamination
Furnaces
Contamination
Gases
Crystals
silicon
Carbon
flow velocity
gases
crystals
Crystal growth from melt
Carrier lifetime
Argon
carbon
carrier lifetime
Flow velocity

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals. / Miyamura, Y.; Harada, H.; Liu, X.; Nakano, S.; Nishizawa, Shinichi; Kakimoto, Koichi.

In: Journal of Crystal Growth, Vol. 507, 01.02.2019, p. 154-156.

Research output: Contribution to journalArticle

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AU - Kakimoto, Koichi

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AB - Power devices with high-performance require long carrier lifetimes within their silicon crystals. This paper reports the in-situ measurement of carbon monoxide in a Czochralski growth furnace of silicon single crystals. Moreover, this paper reports analytical investigation on contamination to silicon melt as functions of pressure in the furnace, argon gas flow velocity and gap width between the melt and a thermal shield. The experimental results show the carbon contamination to the melt increases when the pressure increases and the flow rate decreases. Increase of the gap width increases the contamination of carbon. We could explain the results qualitatively using a simple transport model.

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