In-situ monitoring of dopant concentration variation in a silicon melt during Czochralski growth

Koichi Kakimoto, Minoru Eguchi, Taketoshi Hibiya

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In-situ monitoring of dopant concentration variation in a silicon melt during Czochralski growth was performed using an X-ray radiography system. Indium was used as a dopant. The dopant concentration variation in the melt as a function of fraction solidified and of time lapse after growth interruption was also observed experimentally. It is shown that the time constant for dopant concentration variation in the bulk melt just after growth interruption is some tens of minutes. The time constant for variation of convective mode and for temperature oscillation of the melt is also several minutes. Therefore, the time constant for dopant concentration variation is attributed to its diffusion from an accumulated layer just beneath the solid-liquid interface.

Original languageEnglish
Pages (from-to)819-823
Number of pages5
JournalJournal of Crystal Growth
Volume112
Issue number4
DOIs
Publication statusPublished - Jan 1 1991
Externally publishedYes

Fingerprint

Crystal growth from melt
Silicon
Doping (additives)
Monitoring
time constant
silicon
interruption
X ray radiography
Indium
radiography
liquid-solid interfaces
indium
oscillations
Liquids
x rays
Temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

In-situ monitoring of dopant concentration variation in a silicon melt during Czochralski growth. / Kakimoto, Koichi; Eguchi, Minoru; Hibiya, Taketoshi.

In: Journal of Crystal Growth, Vol. 112, No. 4, 01.01.1991, p. 819-823.

Research output: Contribution to journalArticle

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