In-situ observation of impurity diffusion boundary layer in silicon Czochralski growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

In-situ observation of the impurity diffusion boundary layer during single crystal growth of indium-doped silicon was carried out by X-ray radiography. The difference in the transmitted X-ray image compared with molten silicon just beneath the crystal-melt interface was attributed to the concentration of indium impurities having a larger absorption coefficient. The intensity profile of the transmitted X-ray can be reproduced by a transmittance calculation that considers the meniscus shape and impurity distribution. The impurity distribution profile near the crystal-melt interface was estimated using the Burton-Prim-Slichter (BPS) equation. The observed impurity diffusion boundary layer thickness was about 0.5 mm. It was found that the boundary layer thickness was not constant in the radial direction, which cannot be explained by the BPS theory, since it is based on a one-dimensional calculation.

Original languageEnglish
Pages (from-to)665-669
Number of pages5
JournalJournal of Crystal Growth
Volume99
Issue number1-4
DOIs
Publication statusPublished - Jan 1 1990
Externally publishedYes

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this