In-situ observation of SiC bulk single crystal growth by X-ray topography

Tomohisa Kato, Naoki Oyanagi, Hirotaka Yamaguchi, Yukio Takano, Shinichi Nishizawa, Kazuo Arai

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

We report here for the first time on the in-situ observations for SiC bulk single crystal growth by x-ray topographic technique. Occurrence and dynamic observation of the defects such as micropipes and domain boundaries during SiC crystal growth by the modified Lely method was investigated in a real time display. The in-situ observation was considered to contribute for optimizing the growth conditions and to interpret the mechanism of defects and dislocations formation.

Original languageEnglish
JournalMaterials Science Forum
Volume338
Publication statusPublished - Jan 1 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

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Crystallization
Crystal growth
Topography
crystal growth
topography
Single crystals
X rays
Defects
single crystals
x rays
Display devices
defects
occurrences

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kato, T., Oyanagi, N., Yamaguchi, H., Takano, Y., Nishizawa, S., & Arai, K. (2000). In-situ observation of SiC bulk single crystal growth by X-ray topography. Materials Science Forum, 338.

In-situ observation of SiC bulk single crystal growth by X-ray topography. / Kato, Tomohisa; Oyanagi, Naoki; Yamaguchi, Hirotaka; Takano, Yukio; Nishizawa, Shinichi; Arai, Kazuo.

In: Materials Science Forum, Vol. 338, 01.01.2000.

Research output: Contribution to journalConference article

Kato, T, Oyanagi, N, Yamaguchi, H, Takano, Y, Nishizawa, S & Arai, K 2000, 'In-situ observation of SiC bulk single crystal growth by X-ray topography', Materials Science Forum, vol. 338.
Kato, Tomohisa ; Oyanagi, Naoki ; Yamaguchi, Hirotaka ; Takano, Yukio ; Nishizawa, Shinichi ; Arai, Kazuo. / In-situ observation of SiC bulk single crystal growth by X-ray topography. In: Materials Science Forum. 2000 ; Vol. 338.
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