In-situ observation of SiC bulk single crystal growth by XRD system

Tomohisa Kato, Shin Ichi Nishizawa, Hirotaka Yamaguchi, Kazuo Arai

Research output: Contribution to journalArticle

Abstract

In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffraction (XRD) system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. The in-situ X-ray topography succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement revealed appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

Original languageEnglish
Pages (from-to)49-53
Number of pages5
JournalJournal of Rare Earths
Volume24
Issue numberSUPPL.
Publication statusPublished - Mar 2006
Externally publishedYes

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Crystallization
X-ray diffraction
Single crystals
crystal
X ray diffraction
Topography
X rays
Monitoring
Sublimation
Crucibles
Dislocations (crystals)
Crystal growth
topography
Elongation
Furnaces
sublimation
monitoring
Defects
Crystals
dislocation

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Geochemistry and Petrology

Cite this

In-situ observation of SiC bulk single crystal growth by XRD system. / Kato, Tomohisa; Nishizawa, Shin Ichi; Yamaguchi, Hirotaka; Arai, Kazuo.

In: Journal of Rare Earths, Vol. 24, No. SUPPL., 03.2006, p. 49-53.

Research output: Contribution to journalArticle

Kato, T, Nishizawa, SI, Yamaguchi, H & Arai, K 2006, 'In-situ observation of SiC bulk single crystal growth by XRD system', Journal of Rare Earths, vol. 24, no. SUPPL., pp. 49-53.
Kato, Tomohisa ; Nishizawa, Shin Ichi ; Yamaguchi, Hirotaka ; Arai, Kazuo. / In-situ observation of SiC bulk single crystal growth by XRD system. In: Journal of Rare Earths. 2006 ; Vol. 24, No. SUPPL. pp. 49-53.
@article{43f5f29bd6d0413c8ebf5bfa1cccd1cc,
title = "In-situ observation of SiC bulk single crystal growth by XRD system",
abstract = "In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffraction (XRD) system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. The in-situ X-ray topography succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement revealed appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.",
author = "Tomohisa Kato and Nishizawa, {Shin Ichi} and Hirotaka Yamaguchi and Kazuo Arai",
year = "2006",
month = "3",
language = "English",
volume = "24",
pages = "49--53",
journal = "Journal of Rare Earths",
issn = "1002-0721",
publisher = "Chinese Rare Earth Society",
number = "SUPPL.",

}

TY - JOUR

T1 - In-situ observation of SiC bulk single crystal growth by XRD system

AU - Kato, Tomohisa

AU - Nishizawa, Shin Ichi

AU - Yamaguchi, Hirotaka

AU - Arai, Kazuo

PY - 2006/3

Y1 - 2006/3

N2 - In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffraction (XRD) system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. The in-situ X-ray topography succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement revealed appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

AB - In-situ analysis for SiC bulk single crystal growth was reported using vertical X-ray diffraction (XRD) system. A furnace for SiC sublimation growth combined with the XRD system which possessed three kinds of functions including topography, rocking curve measurement and crystal growth rate monitoring was developed. These functions could contribute as a powerful tool finding the optimum growth condition by dynamic observation in the crucible. The in-situ X-ray topography succeeded to capture dynamic elongation of defects and dislocation generated in the SiC growing crystals. The in-situ rocking curve measurement revealed appearance of mosaic structure in the SiC crystal grown with high growth rate. The in-situ growth rate monitoring also succeeded very precisely using the direct X-ray beam absorption. On the base of findings and facts obtained by the in-situ observations, the importance for the SiC growth was discussed.

UR - http://www.scopus.com/inward/record.url?scp=33745577924&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33745577924&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33745577924

VL - 24

SP - 49

EP - 53

JO - Journal of Rare Earths

JF - Journal of Rare Earths

SN - 1002-0721

IS - SUPPL.

ER -