In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

Using X-ray radiography, in-situ observation of solid-liquid interface shape during silicon single crystal growth by a Czochralski method was carried out. Contrast which is attributed to the existence of solid-liquid interface has been obtained. Simulation of transmitted X-ray image by absorption calculation was carried out using absorption coefficients both for molten and for solid silicon, and supports the fact that the solid-liquid interface can be observed. Change of interface shape from convex to concave to the melt during the shouldering process was also in-situ observed.

Original languageEnglish
Pages (from-to)509-514
Number of pages6
JournalJournal of Crystal Growth
Volume91
Issue number4
DOIs
Publication statusPublished - Sep 1988
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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