In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth

Koichi Kakimoto, Minoru Eguchi, Hisao Watanabe, Taketoshi Hibiya

Research output: Contribution to journalArticle

26 Citations (Scopus)

Abstract

Using X-ray radiography, in-situ observation of solid-liquid interface shape during silicon single crystal growth by a Czochralski method was carried out. Contrast which is attributed to the existence of solid-liquid interface has been obtained. Simulation of transmitted X-ray image by absorption calculation was carried out using absorption coefficients both for molten and for solid silicon, and supports the fact that the solid-liquid interface can be observed. Change of interface shape from convex to concave to the melt during the shouldering process was also in-situ observed.

Original languageEnglish
Pages (from-to)509-514
Number of pages6
JournalJournal of Crystal Growth
Volume91
Issue number4
DOIs
Publication statusPublished - Jan 1 1988
Externally publishedYes

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X ray radiography
Silicon
radiography
liquid-solid interfaces
Crystallization
Crystal growth
crystal growth
Single crystals
single crystals
Liquids
silicon
x rays
Czochralski method
Crystal growth from melt
absorptivity
Molten materials
X rays
simulation

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

Cite this

In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth. / Kakimoto, Koichi; Eguchi, Minoru; Watanabe, Hisao; Hibiya, Taketoshi.

In: Journal of Crystal Growth, Vol. 91, No. 4, 01.01.1988, p. 509-514.

Research output: Contribution to journalArticle

Kakimoto, Koichi ; Eguchi, Minoru ; Watanabe, Hisao ; Hibiya, Taketoshi. / In-situ observation of solid-liquid interface shape by X-ray radiography during silicon single crystal growth. In: Journal of Crystal Growth. 1988 ; Vol. 91, No. 4. pp. 509-514.
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