In situ x-ray topography of silicon carbide during crystal growth by sublimation method

H. Yamaguchi, S. Nishizawa, T. Kato, N. Oyanagi, W. Bahng, S. Yoshida, K. Arai, Y. Machitani, T. Kikuchi

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)

Abstract

We have developed an instrument for real-time observation of silicon carbide (SiC) crystal during the sublimation growth process by x-ray topography. It is constructed by combining an x-ray goniometer and a crystal-growth chamber. The vertical goniometer consists of three circles, an α circle for the x-ray source, a β circle for the detector, and a φ circle for the azimuthal rotation of the sample. The growing crystal boule is set at the center of the goniometer glued on a crucible lid. Transmission topographs are taken using an asymmetric (1011) reflection with the scattering angle 2 θB - β - α from the (0001)-oriented boule. A rotating-anode 18 kW generator with a molybdenum target is employed as the x-ray source. Topographs are observed by a direct imaging system using a charge-coupled device camera. Incident and scattered x-ray beams pass through beryllium windows mounted on the bottom and top flanges of the crystal-growth chamber, respectively. The crucibles are also designed for in situ measurements so that the x-ray beam path is separated from the source materials. The in situ topographs demonstrated the movement of micropipes and other defects during the crystal growth.

Original languageEnglish
Pages (from-to)2829-2832
Number of pages4
JournalReview of Scientific Instruments
Volume71
Issue number7
DOIs
Publication statusPublished - 2000
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Instrumentation

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