In 0:75Ga0:25as quantum point contacts utilizing wrap-gate geometry

Hiroshi Irie, Yuichi Harada, Hiroki Sugiyama, Tatsushi Akazaki

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A fabrication technique for quantum point contacts (QPCs) in an InGaAs/InAlAs two-dimensional electron gas heterostructure is reported. The key challenge in realizing a well-behaved QPC is efficient electrostatic control of a one-dimensional channel using the gate electrode. The fabricated QPCs employ a 100-nm-wide mesa constriction and a gate electrode that wraps around the constriction for three-dimensional electricfield gating. In addition, conformal aluminum-oxide growth by atomic layer deposition is employed to suppress gate leakage while minimizing the interface state density. The wrap-gate QPCs show clear conductance steps, demonstrating well-defined quantized transverse modes in the InGaAs-based one-dimensional channel.

Original languageEnglish
Article number024001
JournalApplied Physics Express
Volume5
Issue number2
DOIs
Publication statusPublished - Feb 1 2012
Externally publishedYes

Fingerprint

wrap
Point contacts
Geometry
geometry
constrictions
Electrodes
Two dimensional electron gas
electrodes
Atomic layer deposition
Interface states
mesas
atomic layer epitaxy
electron gas
Heterojunctions
Electrostatics
leakage
aluminum oxides
quantum wells
electrostatics
Aluminum

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

In 0:75Ga0:25as quantum point contacts utilizing wrap-gate geometry. / Irie, Hiroshi; Harada, Yuichi; Sugiyama, Hiroki; Akazaki, Tatsushi.

In: Applied Physics Express, Vol. 5, No. 2, 024001, 01.02.2012.

Research output: Contribution to journalArticle

Irie, Hiroshi ; Harada, Yuichi ; Sugiyama, Hiroki ; Akazaki, Tatsushi. / In 0:75Ga0:25as quantum point contacts utilizing wrap-gate geometry. In: Applied Physics Express. 2012 ; Vol. 5, No. 2.
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