TY - JOUR
T1 - In vacuo substrate pretreatments for enhancing nanodiamond formation in electron cyclotron resonance plasma
AU - Teii, Kungen
AU - Kouzuma, Yutaka
AU - Uchino, Kiichiro
N1 - Funding Information:
This research is continuously supported by the grant of Japan-Taiwan Joint Research Program from Interchange Association, Japan. Experiments were conducted at the Institute for Ionized Gas and Laser Research at Kyushu University.
PY - 2006
Y1 - 2006
N2 - Substrate pretreatment conditions at low pressures have been examined for enhancing nanocrystalline diamond formation on silicon in electron cyclotron resonance (ECR) plasma. Three kinds of pretreatments, (I) exposure to an ECR H 2 plasma with application of a substrate bias from -100 to +30 V, (II) hot-filament heating in H 2 gas, and (III) hot-filament heating in vacuum, were used alone or followed by carburization prior to a two-step process of ion-enhanced nucleation in an ECR plasma and subsequent growth in a hot-filament system. The number density of diamond particles after the final growth step was greatly increased up to the order of 10 7-10 8 cm -2 when applying pretreatment (I) at the bias of 0 V corresponding to the ion-bombardment energy of around 10 eV. In this treatment, a clean and smooth surface with minimal damage was made by the dominance of anisotropic etching by hydrogen ions over isotropic etching by hydrogen atoms. The number density of diamond particles was still more increased when applying pretreatment (II), but the treated surface was unfavorably contaminated and roughened.
AB - Substrate pretreatment conditions at low pressures have been examined for enhancing nanocrystalline diamond formation on silicon in electron cyclotron resonance (ECR) plasma. Three kinds of pretreatments, (I) exposure to an ECR H 2 plasma with application of a substrate bias from -100 to +30 V, (II) hot-filament heating in H 2 gas, and (III) hot-filament heating in vacuum, were used alone or followed by carburization prior to a two-step process of ion-enhanced nucleation in an ECR plasma and subsequent growth in a hot-filament system. The number density of diamond particles after the final growth step was greatly increased up to the order of 10 7-10 8 cm -2 when applying pretreatment (I) at the bias of 0 V corresponding to the ion-bombardment energy of around 10 eV. In this treatment, a clean and smooth surface with minimal damage was made by the dominance of anisotropic etching by hydrogen ions over isotropic etching by hydrogen atoms. The number density of diamond particles was still more increased when applying pretreatment (II), but the treated surface was unfavorably contaminated and roughened.
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U2 - 10.1116/1.2221322
DO - 10.1116/1.2221322
M3 - Article
AN - SCOPUS:33748558181
VL - 24
SP - 1802
EP - 1806
JO - Journal of Vacuum Science and Technology A
JF - Journal of Vacuum Science and Technology A
SN - 0734-2101
IS - 5
ER -