Inactivation of the junction surfaces in SiGe/Si diodes

Fumihiko Hirose, Masashi Mukaida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have studied the optimum junction surface treatment of SiGe/Si/Si pin diodes with the i-layer thickness of 20 μm by I-V measurements and X-ray photoelectron spectroscopy. The I-V measurements indicated that the HF-acid dipping followed by the H2SO4 and H2O 2 treatment has the best breakdown voltages exceeding 300V at the leakage current of 100 μA/cm2. In this treatment, the surface Ge is soluble in the H2SO2 and H2O2 treatment and only SiO2 remains on the surface. On the other hand, low temperature oxidation with UV ozone or D2 ambient resulted in lower breakdown voltages less than 200V, where Si and Ge oxides appear on the surface. The XPS studies suggest the surface GeO2 causes the leakage current in the junction surface.

Original languageEnglish
Title of host publicationState-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium
EditorsP.C. Chang, K. Shiojima, D. Noel Buckley, S. Ahmed
Pages399-405
Number of pages7
VolumePV 2005-04
Publication statusPublished - 2005
Externally publishedYes
Event207th ECS Meeting - Quebec, Canada
Duration: May 16 2005May 20 2005

Other

Other207th ECS Meeting
CountryCanada
CityQuebec
Period5/16/055/20/05

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Hirose, F., & Mukaida, M. (2005). Inactivation of the junction surfaces in SiGe/Si diodes. In P. C. Chang, K. Shiojima, D. Noel Buckley, & S. Ahmed (Eds.), State-of-the-Art Program on Compound Semiconductors, SOTAPOCS XLII and Processes at the Compound Semiconductor/Solution Interface - Proceedings of the International Symposium (Vol. PV 2005-04, pp. 399-405)