InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages196-197
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - Jun 13 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: Feb 28 2017Mar 2 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
Country/TerritoryJapan
CityToyama
Period2/28/173/2/17

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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