InAs MOS-HEMT power detector for 1.0 THz on quartz glass

Eiji Kume, Hiroyuki Ishii, Hiroyuki Hattori, Wen Hsin Chang, Mutsuo Ogura, Haruichi Kanaya, Tanemasa Asano, Tatsuro Maeda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.

Original languageEnglish
Title of host publication2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages196-197
Number of pages2
ISBN (Electronic)9781509046591
DOIs
Publication statusPublished - Jun 13 2017
Event2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Toyama, Japan
Duration: Feb 28 2017Mar 2 2017

Publication series

Name2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings

Other

Other2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017
CountryJapan
CityToyama
Period2/28/173/2/17

Fingerprint

Quartz
High electron mobility transistors
Detectors
Glass
Terahertz waves
Wafer bonding
Bias voltage
Substrates
Power HEMT
Temperature
Power field effect transistors

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Kume, E., Ishii, H., Hattori, H., Chang, W. H., Ogura, M., Kanaya, H., ... Maeda, T. (2017). InAs MOS-HEMT power detector for 1.0 THz on quartz glass. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings (pp. 196-197). [7947562] (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2017.7947562

InAs MOS-HEMT power detector for 1.0 THz on quartz glass. / Kume, Eiji; Ishii, Hiroyuki; Hattori, Hiroyuki; Chang, Wen Hsin; Ogura, Mutsuo; Kanaya, Haruichi; Asano, Tanemasa; Maeda, Tatsuro.

2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. p. 196-197 7947562 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kume, E, Ishii, H, Hattori, H, Chang, WH, Ogura, M, Kanaya, H, Asano, T & Maeda, T 2017, InAs MOS-HEMT power detector for 1.0 THz on quartz glass. in 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings., 7947562, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 196-197, 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017, Toyama, Japan, 2/28/17. https://doi.org/10.1109/EDTM.2017.7947562
Kume E, Ishii H, Hattori H, Chang WH, Ogura M, Kanaya H et al. InAs MOS-HEMT power detector for 1.0 THz on quartz glass. In 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2017. p. 196-197. 7947562. (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings). https://doi.org/10.1109/EDTM.2017.7947562
Kume, Eiji ; Ishii, Hiroyuki ; Hattori, Hiroyuki ; Chang, Wen Hsin ; Ogura, Mutsuo ; Kanaya, Haruichi ; Asano, Tanemasa ; Maeda, Tatsuro. / InAs MOS-HEMT power detector for 1.0 THz on quartz glass. 2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 196-197 (2017 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2017 - Proceedings).
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abstract = "Terahertz wave was detected in 1.0 THz using InAs MOS-HEMT as a non-biased (cold) FET power detector at room temperature. Terahertz power detector was fabricated on quartz glass substrate by direct-wafer-bonding technique. 1.0 THz signal power was directly input to the gate terminal with drain coupling in MOS-HEMT detector through the GSG THz probe. The high responsivity of around 60 V/W was achieved at the bias voltage of -0.4 V.",
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