Incorporation of higher-order silane radicals into A-SI:H films of high stability against light exposure

Masaharu Shiratani, Shinya Iwashita, Kouki Bando, Toshihisa Inoue, Kazunori Koga

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We have studied effects of higher-order silane (HOS) radicals on stability of a-Si:H films against light exposure by using a multi-hollow discharge plasma CVD method. For the method, a short gas residence time of ms in the discharge regions suppresses growth of a-Si:H nano-particles (hereafter referred to as clusters) and gas viscous force drives clusters toward the downstream region. Therefore, we can deposit a-Si:H films without incorporating clusters in the upstream region and such films show high stability. The method is effective in suppressing cluster amount in the discharges, while the method has little effects on Si2H5 and Si3H7 densities there.

Original languageEnglish
Title of host publicationConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
PublisherIEEE Computer Society
Pages1596-1599
Number of pages4
ISBN (Print)1424400163, 9781424400164
DOIs
Publication statusPublished - Jan 1 2006
Event2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States
Duration: May 7 2006May 12 2006

Publication series

NameConference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume2

Other

Other2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
CountryUnited States
CityWaikoloa, HI
Period5/7/065/12/06

All Science Journal Classification (ASJC) codes

  • Renewable Energy, Sustainability and the Environment
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry

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