Increasing laser-doping depth of al in 4H-SiC by using expanded-pulse excimer laser

Akihiro Ikeda, Takashi Shimokawa, Hiroshi Ikenoue, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.

Original languageEnglish
Title of host publicationSilicon Carbide and Related Materials, 2018
EditorsPeter M. Gammon, Vishal A. Shah, Richard A. McMahon, Michael R. Jennings, Oliver Vavasour, Philip A. Mawby, Faye Padfield
PublisherTrans Tech Publications Ltd
Pages412-415
Number of pages4
ISBN (Print)9783035713329
DOIs
Publication statusPublished - Jan 1 2019
Event12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018 - Birmingham, United Kingdom
Duration: Sep 2 2018Sep 6 2018

Publication series

NameMaterials Science Forum
Volume963 MSF
ISSN (Print)0255-5476
ISSN (Electronic)1662-9752

Conference

Conference12th European Conference on Silicon Carbide and Related Materials, ECSCRM 2018
CountryUnited Kingdom
CityBirmingham
Period9/2/189/6/18

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • Cite this

    Ikeda, A., Shimokawa, T., Ikenoue, H., & Asano, T. (2019). Increasing laser-doping depth of al in 4H-SiC by using expanded-pulse excimer laser. In P. M. Gammon, V. A. Shah, R. A. McMahon, M. R. Jennings, O. Vavasour, P. A. Mawby, & F. Padfield (Eds.), Silicon Carbide and Related Materials, 2018 (pp. 412-415). (Materials Science Forum; Vol. 963 MSF). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.963.412